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IRF250 manufactured by:
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General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.

Others with the same file for datasheet:
IRF251, IRF252, IRF253
Download IRF250 datasheet from
General Electric Solid State
pdf
 200 kb 
International Rectifier200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package

Others with the same file for datasheet:
2N6766, JANTX2N6766, JANTXV2N6766
Download IRF250 datasheet from
International Rectifier
pdf
 151 kb 
Intersil30A/ 200V/ 0.085 Ohm/ N-Channel Power MOSFET Download IRF250 datasheet from
Intersil
pdf
 62 kb 


New Jersey SemiconductorTrans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-3

Others with the same file for datasheet:
IRF250FI, IRF250R, IRF252R
Download IRF250 datasheet from
New Jersey Semiconductor
pdf
 135 kb 
Samsung ElectronicN-CHANNEL POWER MOSFETS Download IRF250 datasheet from
Samsung Electronic
pdf
 220 kb 
SemeLABN-CHANNEL POWER MOSFET Download IRF250 datasheet from
SemeLAB
pdf
 27 kb 
IRF247 View IRF250 to our catalog IRF250CF




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