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BC637 manufactured by:
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Continental Device India Limited 0.800W General Purpose NPN Plastic Leaded Transistor. 60V Vceo, 1.000A Ic, 40 - 160 hF

Others with the same file for datasheet:
BC635, BC635-10, BC635-16, BC636, BC636-10
Download BC637 datasheet from
Continental Device India Limited
pdf
 54 kb 
Fairchild SemiconductorNPN Epitaxial Silicon Transistor Download BC637 datasheet from
Fairchild Semiconductor
pdf
 42 kb 
InfineonNPN Silicon AF Transistor

Others with the same file for datasheet:
BC639
Download BC637 datasheet from
Infineon
pdf
 133 kb 
Korea Electronics (KEC)General Purpose Transistor Download BC637 datasheet from
Korea Electronics (KEC)
pdf
 65 kb 
Micro ElectronicsSILICON TRANSISTORS

Others with the same file for datasheet:
BC638, BC640
Download BC637 datasheet from
Micro Electronics
pdf
 191 kb 


MotorolaHigh Current Transistors Download BC637 datasheet from
Motorola
pdf
 123 kb 
ON SemiconductorHigh Current Transistor

Others with the same file for datasheet:
BC635RL1, BC635ZL1, BC639-16ZL1, BC639RL1, BC639ZL1
Download BC637 datasheet from
ON Semiconductor
pdf
 67 kb 
PhilipsNPN medium power transistors

Others with the same file for datasheet:
BC637-16, BC639-10, BC639-16
Download BC637 datasheet from
Philips
pdf
 51 kb 
SiemensNPN Silicon AF Transistors (High current gain High collector current) Download BC637 datasheet from
Siemens
pdf
 133 kb 
USHA India LTDTransistor. Switching and amplifier applications. Vcer = 60V, Vces = 60V, Vceo= 60V, Vebo = 5V, Pc = 1W, Ic = 1A. Download BC637 datasheet from
USHA India LTD
pdf
 78 kb 
BC636ZL1 View BC637 to our catalog BC637-10




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