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BC239 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
Continental Device India Limited 0.350W General Purpose NPN Plastic Leaded Transistor. 25V Vceo, 0.100A Ic, 120 - 800 hFE

Others with the same file for datasheet:
BC237, BC237A, BC237B, BC237C, BC238 		Download BC239 datasheet from
Continental Device India Limited
pdf
 74 kb 
Fairchild SemiconductorSwitching and Amplifier Applications Download BC239 datasheet from
Fairchild Semiconductor
pdf
 47 kb 
Korea Electronics (KEC)General Purpose Transistor Download BC239 datasheet from
Korea Electronics (KEC)
pdf
 70 kb 



Micro ElectronicsNPN SILICON PLANAR EPITAXIAL TRANSISTORo

Others with the same file for datasheet:
BC107, BC108, BC109, BC167, BC168 		Download BC239 datasheet from
Micro Electronics
pdf
 235 kb 
MotorolaAmplifier Transistors

Others with the same file for datasheet:
BC238B, BC238C, BC239C 		Download BC239 datasheet from
Motorola
pdf
 118 kb 
Ultra CEMITranzystor ma³ej czêstotliwo¶ci ma³ej mocy

Others with the same file for datasheet:
BC147, BC148, BC149, BC157, BC158 		Download BC239 datasheet from
Ultra CEMI
pdf
 2180 kb 
USHA India LTDTransistor. Switching and amplifier applications. Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. Download BC239 datasheet from
USHA India LTD
pdf
 54 kb 
BC238TFRView BC239 to our catalogBC239ABU




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