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BC237 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión espańola para esta página Versione italiana per questa pagina Versăo portuguese para esta página Russian Version
Continental Device India Limited 0.350W General Purpose NPN Plastic Leaded Transistor. 45V Vceo, 0.100A Ic, 120 - 800 hFE

Others with the same file for datasheet:
BC237A, BC237B, BC237C, BC238, BC238A 		Download BC237 datasheet from
Continental Device India Limited
pdf
 74 kb 
Fairchild SemiconductorSwitching and Amplifier Applications Download BC237 datasheet from
Fairchild Semiconductor
pdf
 47 kb 
Korea Electronics (KEC)General Purpose Transistor

Others with the same file for datasheet:
BC239 		Download BC237 datasheet from
Korea Electronics (KEC)
pdf
 70 kb 
Micro ElectronicsNPN SILICON PLANAR EPITAXIAL TRANSISTORo

Others with the same file for datasheet:
BC107, BC108, BC109, BC167, BC168 		Download BC237 datasheet from
Micro Electronics
pdf
 235 kb 
MotorolaAmplifier Transistors

Others with the same file for datasheet:
BC238B, BC238C, BC239C 		Download BC237 datasheet from
Motorola
pdf
 118 kb 



ON SemiconductorTransistor Silicon NPN

Others with the same file for datasheet:
BC237BRL1, BC237BZL1 		Download BC237 datasheet from
ON Semiconductor
pdf
 58 kb 
PhilipsNPN general purpose transistors Download BC237 datasheet from
Philips
pdf
 54 kb 
Ultra CEMITranzystor małej częstotliwości małej mocy

Others with the same file for datasheet:
BC147, BC148, BC149, BC157, BC158 		Download BC237 datasheet from
Ultra CEMI
pdf
 2180 kb 
Ultra CEMITranzystor krzemowy małej mocy, małej częstotliwości Download BC237 datasheet from
Ultra CEMI
pdf
 374 kb 
USHA India LTDTransistor. Switching and amplifier applications. Collector-base voltage Vcbo = 50V. Collector-emitter voltage Vceo = 45V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 500mW. Collector current Ic = 100mA. Download BC237 datasheet from
USHA India LTD
pdf
 53 kb 
BC214RL1View BC237 to our catalogBC237-D




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