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2N6761 manufactured by:
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Fairchild SemiconductorN-Channel Power MOSFETs/ 4.5A/ 450V/500V Download 2N6761 datasheet from
Fairchild Semiconductor
pdf
 142 kb 
General Electric Solid StateN-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. Download 2N6761 datasheet from
General Electric Solid State
pdf
 118 kb 
2N6760E3 View 2N6761 to our catalog 2N6762




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