DatasheetCatalog.com Logo
  |   Home   |   All manufacturers   |   By Category   |  
Versiunea Romaneasca Russian version Versão portuguese Versione italiana
Versión española Deutsche Version Version française

   
Quick jump to: 1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UAUp1 Up level 1
LM317 LM339 MAX232 NE555 LM324 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148 PAE19209 Up2 Up level 2

2N6519 manufactured by:
Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
Central SemiconductorLeaded Small Signal Transistor General Purpose

Others with the same file for datasheet:
2N6515, 2N6516, 2N6517, 2N6518, 2N6520
Download 2N6519 datasheet from
Central Semiconductor
pdf
 93 kb 
Continental Device India Limited 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hF Download 2N6519 datasheet from
Continental Device India Limited
pdf
 162 kb 
Fairchild SemiconductorPNP Epitaxial Silicon Transistor - High Voltage Transistor Download 2N6519 datasheet from
Fairchild Semiconductor
pdf
 30 kb 
MCCIc=500mA, Vce=10V transistor Download 2N6519 datasheet from
MCC
pdf
 430 kb 


Micro Commercial ComponentsHigh Voltage Transistor 625mW Download 2N6519 datasheet from
Micro Commercial Components
pdf
 430 kb 
ON SemiconductorHigh Voltage Transistors Download 2N6519 datasheet from
ON Semiconductor
pdf
 234 kb 
Samsung ElectronicPNP EPITAXIAL SILICON TRANSISTOR Download 2N6519 datasheet from
Samsung Electronic
pdf
 42 kb 
USHA India LTDHigh voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. Download 2N6519 datasheet from
USHA India LTD
pdf
 55 kb 
2N6518TA View 2N6519 to our catalog 2N6519BU




© 2020 - Datasheet Catalog com