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2N5630 manufactured by:Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian Version
Central SemiconductorCOMPLEMENTARY SILICON POWER TRANSISTORS

Others with the same file for datasheet:
2N6029, 2N6030
Download 2N5630 datasheet from
Central Semiconductor
pdf
 72 kb 
General Electric Solid StateSilicon N-P-N epitaxial-base high-power transistor. 120V, 200W. Download 2N5630 datasheet from
General Electric Solid State
pdf
 198 kb 
MotorolaCollector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits

Others with the same file for datasheet:
2N6031
Download 2N5630 datasheet from
Motorola
pdf
 259 kb 



New Jersey SemiconductorTrans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve Download 2N5630 datasheet from
New Jersey Semiconductor
pdf
 49 kb 
SavanticSilicon NPN Power Transistors TO-3 package Download 2N5630 datasheet from
Savantic
pdf
 110 kb 
SemeLABBipolar NPN Device

Others with the same file for datasheet:
SF_2N5630
Download 2N5630 datasheet from
SemeLAB
pdf
 16 kb 
2N5629View 2N5630 to our catalog2N5631



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