2N5630 datasheet
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2N5630 manufactured by:
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COMPLEMENTARY SILICON POWER TRANSISTORS Others with the same file for datasheet: 2N5629, 2N6029, 2N6030 |
Download 2N5630 datasheet from Central Semiconductor |
pdf 72 kb |
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Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W. | 
Download 2N5630 datasheet from General Electric Solid State |
pdf 198 kb |
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Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuits Others with the same file for datasheet: 2N6031 |
Download 2N5630 datasheet from Motorola |
pdf 259 kb |
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Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 Sleeve | Download 2N5630 datasheet from New Jersey Semiconductor |
pdf 49 kb |
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Silicon NPN Power Transistors TO-3 package | Download 2N5630 datasheet from Savantic |
pdf 110 kb |
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Bipolar NPN Device Others with the same file for datasheet: SF_2N5630 |
Download 2N5630 datasheet from SemeLAB |
pdf 16 kb |
| 2N563 | View 2N5630 to our catalog | 2N5631 |