| 92601 | 2N6655 | Bipolar NPN Device | SemeLAB |
| 92602 | 2N6655/1 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92603 | 2N6655/2 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92604 | 2N6655/3 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92605 | 2N6655/4 | Silicon NPN High Power High Voltage Switching Transistor | IPRS Baneasa |
| 92606 | 2N6655A | Silicon NPN, High Power, High Voltage Switching Transistor | IPRS Baneasa |
| 92607 | 2N6655B | Silicon NPN, High Power, High Voltage Switching Transistor | IPRS Baneasa |
| 92608 | 2N6659 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 92609 | 2N6659 | Trans MOSFET N-CH 35V 1.4A 3-Pin TO-205AD | New Jersey Semiconductor |
| 92610 | 2N6659 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | SemeLAB |
| 92611 | 2N6660 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 92612 | 2N6660 | Trans MOSFET N-CH 60V 0.99A 3-Pin TO-205AD | New Jersey Semiconductor |
| 92613 | 2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 92614 | 2N6660 | N-Channel 60-V (D-S) Single and Quad MOSFETs | Vishay |
| 92615 | 2N6661 | N-Channel Enhancement Mode MOSFETs | Microchip |
| 92616 | 2N6661 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 92617 | 2N6661 | Trans MOSFET N-CH 90V 0.35A 3-Pin TO-39 | New Jersey Semiconductor |
| 92618 | 2N6661 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | SemeLAB |
| 92619 | 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
|
| 92620 | 2N6661 | N-Channel 80-V and 90-V (D-S) MOSFETS | Vishay |
| 92621 | 2N6666 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 92622 | 2N6666 | Leaded Power Transistor Darlington | Central Semiconductor |
| 92623 | 2N6666 | 10 A P-N-P darlington power transistor. -40 V. 65 W. Gain of 1000 at 3 A. | General Electric Solid State |
| 92624 | 2N6666 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 92625 | 2N6667 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 92626 | 2N6667 | Leaded Power Transistor Darlington | Central Semiconductor |
| 92627 | 2N6667 | 10 A P-N-P darlington power transistor. -60 V. 65 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 92628 | 2N6667 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 92629 | 2N6667 | Trans Darlington PNP 60V 10A 3-Pin(3+Tab) TO-220 Box | New Jersey Semiconductor |
| 92630 | 2N6667 | Power 8A 60V Darlington PNP | ON Semiconductor |
| 92631 | 2N6667-D | Darlington Silicon Power Transistors | ON Semiconductor |
| 92632 | 2N6668 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 92633 | 2N6668 | Leaded Power Transistor Darlington | Central Semiconductor |
| 92634 | 2N6668 | 10 A P-N-P darlington power transistor. -80 V. 65 W. Gain of 1000 at 5 A. | General Electric Solid State |
| 92635 | 2N6668 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 92636 | 2N6668 | Trans Darlington PNP 80V 10A 3-Pin(3+Tab) TO-220 Box | New Jersey Semiconductor |
| 92637 | 2N6668 | Power 8A 80V Darlington PNP | ON Semiconductor |
| 92638 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | SGS Thomson Microelectronics |
| 92639 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | SGS Thomson Microelectronics |
| 92640 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | ST Microelectronics |
