| 92521 | 2N657C | BJT | New Jersey Semiconductor |
| 92522 | 2N657S | BJT | New Jersey Semiconductor |
| 92523 | 2N658 | Germanium PNP Transistor | Motorola |
| 92524 | 2N658 | Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 | New Jersey Semiconductor |
| 92525 | 2N6580 | Trans GP BJT NPN 400V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 92526 | 2N6581 | Trans GP BJT NPN 450V 10A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 92527 | 2N6581 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SemeLAB |
| 92528 | 2N6583 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SemeLAB |
| 92529 | 2N659 | Germanium PNP Transistor | Motorola |
| 92530 | 2N659 | Trans GP BJT NPN 350V 0.5A 3-Pin TO-92 | New Jersey Semiconductor |
| 92531 | 2N6594 | PNP SILICON POWER TRANSISTOR | Boca Semiconductor Corporation |
| 92532 | 2N6594 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 92533 | 2N6594 | POWER TRANSISTORS(12A,40V,100W) | MOSPEC Semiconductor |
| 92534 | 2N6594 | Silicon PNP Power Transistors TO-3 package | Savantic |
| 92535 | 2N66 | PNP Transistor | Motorola |
| 92536 | 2N660 | SCRs | Central Semiconductor |
| 92537 | 2N660 | Germanium PNP Transistor | Motorola |
| 92538 | 2N660 | Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 92539 | 2N6603 | NPN silicon high frequency transistor NF=2.0dB - 1GHz | Motorola |
|
| 92540 | 2N6604 | NPN silicon high frequency transistor NF=2.7dB - 1.0GHz | Motorola |
| 92541 | 2N6605 | Leaded Thyristor SCR | Central Semiconductor |
| 92542 | 2N6606 | Leaded Thyristor SCR | Central Semiconductor |
| 92543 | 2N6607 | Leaded Thyristor SCR | Central Semiconductor |
| 92544 | 2N6608 | Leaded Thyristor SCR | Central Semiconductor |
| 92545 | 2N6609 | COMPLEMENTARY SILICON POWER TRANSISTORS | Boca Semiconductor Corporation |
| 92546 | 2N6609 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 92547 | 2N6609 | Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W. | General Electric Solid State |
| 92548 | 2N6609 | POWER TRANSISTORS(16A,140V,150W) | MOSPEC Semiconductor |
| 92549 | 2N6609 | Trans GP BJT PNP 140V 16A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 92550 | 2N6609 | Power 16A 140V Discrete PNP | ON Semiconductor |
| 92551 | 2N661 | Germanium PNP Transistor | Motorola |
| 92552 | 2N661 | Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 92553 | 2N6619 | 12 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching application | Siemens |
| 92554 | 2N662 | Germanium PNP Transistor | Motorola |
| 92555 | 2N662 | Trans GP BJT NPN 300V 15A 3-Pin(2+Tab) TO-3 Sleeve | New Jersey Semiconductor |
| 92556 | 2N6620 | NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER | Siemens |
| 92557 | 2N6621 | 25 V, 25 mA, NPN silicon RF broadband transistor | Siemens |
| 92558 | 2N663 | Germanium PNP Transistor | Motorola |
| 92559 | 2N6648 | Leaded Power Transistor Darlington | Central Semiconductor |
| 92560 | 2N6648 | 10 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A. | General Electric Solid State |
