| 92321 | 2N6516 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 92322 | 2N6516 | High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 92323 | 2N6517 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 92324 | 2N6517 | 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFE | Continental Device India Limited |
| 92325 | 2N6517 | NPN Epitaxial Silicon Transistor - High Voltage Transistor | Fairchild Semiconductor |
| 92326 | 2N6517 | Ic=500mA, Vce=10V transistor | MCC |
| 92327 | 2N6517 | High Voltage Transistor 625mW | Micro Commercial Components |
| 92328 | 2N6517 | High Voltage Transistors | ON Semiconductor |
| 92329 | 2N6517 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 92330 | 2N6517 | High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 92331 | 2N6517 | NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | Zetex Semiconductors |
| 92332 | 2N6517BU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 92333 | 2N6517CBU | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 92334 | 2N6517CTA | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 92335 | 2N6517RLRA | High Voltage Transistors | ON Semiconductor |
| 92336 | 2N6517RLRP | High Voltage Transistors | ON Semiconductor |
| 92337 | 2N6517TA | NPN Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 92338 | 2N6518 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 92339 | 2N6518 | PNP Epitaxial Silicon Transistor - High Voltage Transistor | Fairchild Semiconductor |
|
| 92340 | 2N6518 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 92341 | 2N6518 | High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. | USHA India LTD |
| 92342 | 2N6518BU | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 92343 | 2N6518TA | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 92344 | 2N6519 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 92345 | 2N6519 | 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFE | Continental Device India Limited |
| 92346 | 2N6519 | PNP Epitaxial Silicon Transistor - High Voltage Transistor | Fairchild Semiconductor |
| 92347 | 2N6519 | Ic=500mA, Vce=10V transistor | MCC |
| 92348 | 2N6519 | High Voltage Transistor 625mW | Micro Commercial Components |
| 92349 | 2N6519 | High Voltage Transistors | ON Semiconductor |
| 92350 | 2N6519 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 92351 | 2N6519 | High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. | USHA India LTD |
| 92352 | 2N6519BU | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 92353 | 2N6519RLRA | High Voltage Transistors | ON Semiconductor |
| 92354 | 2N6519TA | PNP Epitaxial Silicon Transistor | Fairchild Semiconductor |
| 92355 | 2N651A | PNP Germanium transistor in the audio-frequency range applications | Motorola |
| 92356 | 2N651A | Germanium PNP Transistor | Motorola |
| 92357 | 2N651A | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
| 92358 | 2N652 | PNP Germanium transistor in the audio-frequency range applications | Motorola |
| 92359 | 2N652 | Germanium PNP Transistor | Motorola |
| 92360 | 2N652 | Trans GP BJT PNP 0.5A | New Jersey Semiconductor |
