| 90841 | 2N6035 | Epitaxial-base darlington transistor for linear and switching applications | SGS-ATES |
| 90842 | 2N6035 | MIDIUM POWER DAR;OMGTONS | ST Microelectronics |
| 90843 | 2N6035-D | Plastic Darlington Complementary Silicon Power Transistors | ON Semiconductor |
| 90844 | 2N6036 | Leaded Power Transistor Darlington | Central Semiconductor |
| 90845 | 2N6036 | 40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 100 hFE. | Continental Device India Limited |
| 90846 | 2N6036 | TO-126 Plastic-Encapsulate Biploar Transistors | Micro Commercial Components |
| 90847 | 2N6036 | Trans Darlington PNP 60V 4A 3-Pin TO-126 | New Jersey Semiconductor |
| 90848 | 2N6036 | Power 4A 80V PNPD | ON Semiconductor |
| 90849 | 2N6036 | Silicon PNP Power Transistors TO-126 package | Savantic |
| 90850 | 2N6036 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS Thomson Microelectronics |
| 90851 | 2N6036 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS Thomson Microelectronics |
| 90852 | 2N6036 | Epitaxial-base darlington transistor for linear and switching applications | SGS-ATES |
| 90853 | 2N6036 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | ST Microelectronics |
| 90854 | 2N6037 | Leaded Power Transistor Darlington | Central Semiconductor |
| 90855 | 2N6037 | 40.000W Medium Power PNP Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 750 - 15000 hFE. | Continental Device India Limited |
| 90856 | 2N6037 | Trans Darlington NPN 40V 4A 3-Pin TO-126 Box | New Jersey Semiconductor |
| 90857 | 2N6037 | Silicon NPN Power Transistors TO-126 package | Savantic |
| 90858 | 2N6037 | NPN medium power darlington transistor, 4A , 40V | SGS Thomson Microelectronics |
| 90859 | 2N6037 | Epitaxial-base darlington transistor for linear and switching applications | SGS-ATES |
|
| 90860 | 2N6037 | MIDIUM POWER DAR;OMGTONS | ST Microelectronics |
| 90861 | 2N6038 | Leaded Power Transistor Darlington | Central Semiconductor |
| 90862 | 2N6038 | 40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 750 - 15000 hFE. | Continental Device India Limited |
| 90863 | 2N6038 | Trans Darlington NPN 60V 4A 3-Pin TO-126 Box | New Jersey Semiconductor |
| 90864 | 2N6038 | Plastic Darlington Complementary Silicon Power Transistors | ON Semiconductor |
| 90865 | 2N6038 | Silicon NPN Power Transistors TO-126 package | Savantic |
| 90866 | 2N6038 | NPN medium power darlington transistor, 4A , 60V | SGS Thomson Microelectronics |
| 90867 | 2N6038 | Epitaxial-base darlington transistor for linear and switching applications | SGS-ATES |
| 90868 | 2N6038 | MIDIUM POWER DAR;OMGTONS | ST Microelectronics |
| 90869 | 2N6039 | Leaded Power Transistor Darlington | Central Semiconductor |
| 90870 | 2N6039 | W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, A Ic, hFE. | Continental Device India Limited |
| 90871 | 2N6039 | Trans Darlington NPN 80V 4A 3-Pin TO-126 Box | New Jersey Semiconductor |
| 90872 | 2N6039 | Power 4A 80V NPND | ON Semiconductor |
| 90873 | 2N6039 | Silicon NPN Power Transistors TO-126 package | Savantic |
| 90874 | 2N6039 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS Thomson Microelectronics |
| 90875 | 2N6039 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | SGS Thomson Microelectronics |
| 90876 | 2N6039 | Epitaxial-base darlington transistor for linear and switching applications | SGS-ATES |
| 90877 | 2N6039 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS | ST Microelectronics |
| 90878 | 2N604 | Germanium PNP Transistor | Motorola |
| 90879 | 2N6040 | DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Boca Semiconductor Corporation |
| 90880 | 2N6040 | Leaded Power Transistor Darlington | Central Semiconductor |
