89801 | 2N6759 | N-Channel Power MOSFETs/ 5.5A/ 350V/400V | Fairchild Semiconductor |
89802 | 2N6759 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A. | General Electric Solid State |
89803 | 2N6760 | N-Channel Power MOSFETs/ 5.5A/ 350V/400V | Fairchild Semiconductor |
89804 | 2N6760 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A. | General Electric Solid State |
89805 | 2N6760 | 400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
89806 | 2N6760 | N-Channel | Microsemi |
89807 | 2N6760E3 | N-Channel | Microsemi |
89808 | 2N6761 | N-Channel Power MOSFETs/ 4.5A/ 450V/500V | Fairchild Semiconductor |
89809 | 2N6761 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A. | General Electric Solid State |
89810 | 2N6762 | N-Channel Power MOSFETs/ 4.5A/ 450V/500V | Fairchild Semiconductor |
89811 | 2N6762 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A. | General Electric Solid State |
89812 | 2N6762 | 500V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
89813 | 2N6762 | N-Channel | Microsemi |
89814 | 2N6762E3 | N-Channel | Microsemi |
89815 | 2N6763 | N-Channel Power MOSFETs/ 38A/ 60V/100V | Fairchild Semiconductor |
89816 | 2N6763 | FET DEVICES WITH N_CHANNEL POLARITY | New Jersey Semiconductor |
89817 | 2N6764 | N-Channel Power MOSFETs/ 38A/ 60V/100V | Fairchild Semiconductor |
89818 | 2N6764 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A. | General Electric Solid State |
89819 | 2N6764 | 100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package | International Rectifier |
|
89820 | 2N6764 | N-Channel | Microsemi |
89821 | 2N6764 | Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
89822 | 2N6764 | N-channel enhancement mode MOSFET power transistor | Omnirel |
89823 | 2N6764E3 | N-Channel | Microsemi |
89824 | 2N6764T1 | N-Channel | Microsemi |
89825 | 2N6764T1E3 | N-Channel | Microsemi |
89826 | 2N6765 | N-Channel Power MOSFETs/ 30A/ 150V/200V | Fairchild Semiconductor |
89827 | 2N6765 | FET DEVICES WITH N_CHANNEL POLARITY | New Jersey Semiconductor |
89828 | 2N6766 | N-Channel Power MOSFETs/ 30A/ 150V/200V | Fairchild Semiconductor |
89829 | 2N6766 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A. | General Electric Solid State |
89830 | 2N6766 | 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package | International Rectifier |
89831 | 2N6766 | N-Channel | Microsemi |
89832 | 2N6766 | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE | New Jersey Semiconductor |
89833 | 2N6766 | N-channel enhancement mode MOSFET power transistor | Omnirel |
89834 | 2N6766BX5 | Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AE | New Jersey Semiconductor |
89835 | 2N6766E3 | N-Channel | Microsemi |
89836 | 2N6766T1 | N-Channel | Microsemi |
89837 | 2N6766T1E3 | N-Channel | Microsemi |
89838 | 2N6767 | N-Channel Power MOSFETs/ 15A/ 350V/400V | Fairchild Semiconductor |
89839 | 2N6767 | FET DEVICES WITH N_CHANNEL POLARITY | New Jersey Semiconductor |
89840 | 2N6768 | N-Channel Power MOSFETs/ 15A/ 350V/400V | Fairchild Semiconductor |