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Datasheets found :: 1712183
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No.Part NameDescriptionManufacturer
898012N6759N-Channel Power MOSFETs/ 5.5A/ 350V/400VFairchild Semiconductor
898022N6759N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
898032N6760N-Channel Power MOSFETs/ 5.5A/ 350V/400VFairchild Semiconductor
898042N6760N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A.General Electric Solid State
898052N6760400V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
898062N6760N-ChannelMicrosemi
898072N6760E3N-ChannelMicrosemi
898082N6761N-Channel Power MOSFETs/ 4.5A/ 450V/500VFairchild Semiconductor
898092N6761N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.General Electric Solid State
898102N6762N-Channel Power MOSFETs/ 4.5A/ 450V/500VFairchild Semiconductor
898112N6762N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
898122N6762500V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
898132N6762N-ChannelMicrosemi
898142N6762E3N-ChannelMicrosemi
898152N6763N-Channel Power MOSFETs/ 38A/ 60V/100VFairchild Semiconductor
898162N6763FET DEVICES WITH N_CHANNEL POLARITYNew Jersey Semiconductor
898172N6764N-Channel Power MOSFETs/ 38A/ 60V/100VFairchild Semiconductor
898182N6764N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A.General Electric Solid State
898192N6764100V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier


898202N6764N-ChannelMicrosemi
898212N6764Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
898222N6764N-channel enhancement mode MOSFET power transistorOmnirel
898232N6764E3N-ChannelMicrosemi
898242N6764T1N-ChannelMicrosemi
898252N6764T1E3N-ChannelMicrosemi
898262N6765N-Channel Power MOSFETs/ 30A/ 150V/200VFairchild Semiconductor
898272N6765FET DEVICES WITH N_CHANNEL POLARITYNew Jersey Semiconductor
898282N6766N-Channel Power MOSFETs/ 30A/ 150V/200VFairchild Semiconductor
898292N6766N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.General Electric Solid State
898302N6766200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
898312N6766N-ChannelMicrosemi
898322N6766Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AENew Jersey Semiconductor
898332N6766N-channel enhancement mode MOSFET power transistorOmnirel
898342N6766BX5Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AENew Jersey Semiconductor
898352N6766E3N-ChannelMicrosemi
898362N6766T1N-ChannelMicrosemi
898372N6766T1E3N-ChannelMicrosemi
898382N6767N-Channel Power MOSFETs/ 15A/ 350V/400VFairchild Semiconductor
898392N6767FET DEVICES WITH N_CHANNEL POLARITYNew Jersey Semiconductor
898402N6768N-Channel Power MOSFETs/ 15A/ 350V/400VFairchild Semiconductor


Datasheets found :: 1712183
Page: << | 2241 | 2242 | 2243 | 2244 | 2245 | 2246 | 2247 | 2248 | 2249 | 2250 | 2251 | >>


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