| 89281 | 2N5396 | N-Channel Junction FET (Field-Effect Transistor) | Motorola |
| 89282 | 2N5397 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 89283 | 2N5397 | N-channel JFET. High frequency amplifier. | Intersil |
| 89284 | 2N5397 | N-Channel Junction FET (Field-Effect Transistor) | Motorola |
| 89285 | 2N5397 | N-CHANNEL SILICON JUNCTION FET | New Jersey Semiconductor |
| 89286 | 2N5398 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 89287 | 2N5398 | N-channel JFET. High frequency amplifier. | Intersil |
| 89288 | 2N5398 | N-Channel Junction FET (Field-Effect Transistor) | Motorola |
| 89289 | 2N5398 | N-CHANNEL SILICON JUNCTION FET | New Jersey Semiconductor |
| 89290 | 2N5399 | Silicon NPN Transistor | Motorola |
| 89291 | 2N539A | Germanium PNP Transistor | Motorola |
| 89292 | 2N539A | Germanium PNP Power Transistor, TO-10 Package | Silicon Transistor Corporation |
| 89293 | 2N54 | Germanium PNP Transistor | Motorola |
| 89294 | 2N540 | Germanium PNP Transistor | Motorola |
| 89295 | 2N540 | Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-66 Sleeve | New Jersey Semiconductor |
| 89296 | 2N540 | Germanium PNP Power Transistor, TO-10 Package | Silicon Transistor Corporation |
| 89297 | 2N5400 | AMPLIFIER TRANSISTOR PNP SILICON | Boca Semiconductor Corporation |
| 89298 | 2N5400 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 89299 | 2N5400 | 0.500W General Purpose PNP Plastic Leaded Transistor. 120V Vceo, 0.600A Ic, 40 - hFE | Continental Device India Limited |
|
| 89300 | 2N5400 | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 89301 | 2N5400 | PNP Silicon Epitaxial Planar Transistor | Honey Technology |
| 89302 | 2N5400 | High Voltage Transistor | Korea Electronics (KEC) |
| 89303 | 2N5400 | SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORS | Micro Electronics |
| 89304 | 2N5400 | Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box | New Jersey Semiconductor |
| 89305 | 2N5400 | Amplifier Transistor(PNP Silicon) | ON Semiconductor |
| 89306 | 2N5400 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 89307 | 2N5400 | PNP Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applications | Semtech |
| 89308 | 2N5400 | Amplifier transistor. Collector-emitter voltage: Vceo = -120V. Collector-base voltage: Vcbo = -130V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 89309 | 2N5400RA | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 89310 | 2N5400RLRA | Amplifier Transistor PNP | ON Semiconductor |
| 89311 | 2N5400RLRP | Amplifier Transistor PNP | ON Semiconductor |
| 89312 | 2N5400S | High Voltage Transistor | Korea Electronics (KEC) |
| 89313 | 2N5400_D26Z | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 89314 | 2N5400_D27Z | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 89315 | 2N5400_D75Z | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 89316 | 2N5400_D81Z | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 89317 | 2N5401 | PNP Silicon Transistor (General purpose amplifier High voltage application) | AUK Corp |
| 89318 | 2N5401 | AMPLIFIER TRANSISTOR PNP SILICON | Boca Semiconductor Corporation |
| 89319 | 2N5401 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 89320 | 2N5401 | 0.625W General Purpose PNP Plastic Leaded Transistor. 150V Vceo, 0.600A Ic, 50 - hFE | Continental Device India Limited |
