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Datasheets found :: 1726161
Page: << | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 | 2027 | >>
No.Part NameDescriptionManufacturer
808412N2640Silicon NPN TransistorMotorola
808422N2640DUAL AMPLIFIER TRANSISTORS NPN SILICONMotorola
808432N2640DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNTNew Jersey Semiconductor
808442N2640Silicon transistor NPN differential amplifiersSprague
808452N2641Leaded Small Signal Transistor DualCentral Semiconductor
808462N2641Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiersMotorola
808472N2641Silicon NPN TransistorMotorola
808482N2641DUAL AMPLIFIER TRANSISTORS NPN SILICONMotorola
808492N2641DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNTNew Jersey Semiconductor
808502N2641Silicon transistor NPN differential amplifiersSprague
808512N2641ATrans GP BJT NPN 45V 0.03A 6-Pin LCC-2New Jersey Semiconductor
808522N2642Leaded Small Signal Transistor DualCentral Semiconductor
808532N2642Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiersMotorola
808542N2642Silicon NPN TransistorMotorola
808552N2642DUAL AMPLIFIER TRANSISTORS NPN SILICONMotorola
808562N2642BIPOLAR DEVICES WITH POLARITY NPNNew Jersey Semiconductor
808572N2642Silicon transistor differential amplifiersSGS-ATES
808582N2642Silicon transistor NPN differential amplifiersSprague
808592N2643Leaded Small Signal Transistor DualCentral Semiconductor


808602N2643Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiersMotorola
808612N2643Silicon NPN TransistorMotorola
808622N2643DUAL AMPLIFIER TRANSISTORS NPN SILICONMotorola
808632N2643DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNTNew Jersey Semiconductor
808642N2643Silicon transistor differential amplifiersSGS-ATES
808652N2643Silicon transistor NPN differential amplifiersSprague
808662N2644Leaded Small Signal Transistor DualCentral Semiconductor
808672N2644Dual NPN silicon annular transistor designed for low-level, low-noise differential amplifiersMotorola
808682N2644Silicon NPN TransistorMotorola
808692N2644DUAL AMPLIFIER TRANSISTORS NPN SILICONMotorola
808702N2644DUAL BIPOLAR NPN DEVICES IN A HERMETICALLY SEALED LCC2 CERAMIC SURFACE MOUNTNew Jersey Semiconductor
808712N2644Silicon transistor NPN differential amplifiersSprague
808722N2645Leaded Small Signal Transistor General PurposeCentral Semiconductor
808732N2645Silicon NPN TransistorMotorola
808742N2646Silicon PN Unijuction TransistorBoca Semiconductor Corporation
808752N2646UNIJUNCTIONS TRANSISTORCCSIT-CE
808762N264630V Silicon unijonction transistorComset Semiconductors
808772N2646Silicon unijunction transistor. 30V, 50mA.General Electric Solid State
808782N2646UNIJUNCTION TRANSISTORICCE
808792N2646Silicon Planar UNIJUNCTION TransistorIPRS Baneasa
808802N2646Silicon annular PN unijunction transistor designed for use in pulse and timing circuits, sensing circuits and thyristor trigger circuitsMotorola


Datasheets found :: 1726161
Page: << | 2017 | 2018 | 2019 | 2020 | 2021 | 2022 | 2023 | 2024 | 2025 | 2026 | 2027 | >>


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