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Datasheets found :: 1042530

Page: << | 19998 | 19999 | 20000 | 20001 | 20002 | 20003 | 20004 | 20005 | 20006 | 20007 | 20008 | >>

Nr.	Part Name	Description	Manufacturer by
800081	PTF10193	12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
800082	PTF10195	125 Watts, 869–894 MHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
800083	PTF102027	40 Watts, 925–960 MHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
800084	PTF102028	18 Watts, 860–960 MHz GOLDMOS Field Effect Transistor	Ericsson Microelectronics
800085	PTF180101	LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz	Infineon
800086	PTF180101S	LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz	Infineon
800087	PTF180601	LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz	Infineon
800088	PTF180601C	LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz	Infineon
800089	PTF180601E	LDMOS Field Effect Transistor 60 W/ DCS/PCS Band 1805-1880 MHz/ 1930-1990 MHz	Infineon
800090	PTF180901E	GSM/EDGE RF Power FET	Infineon
800091	PTF180901F	GSM/EDGE RF Power FET	Infineon
800092	PTF181301	LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz	Infineon
800093	PTF181301A	LDMOS RF Power Field Effect Transistor 130 W/ 1805-1880 MHz	Infineon
800094	PTF191601	LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz	Infineon
800095	PTF191601E	LDMOS RF Power Field Effect Transistor 160 W/ 1930-1990 MHz	Infineon
800096	PTF210301	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon
800097	PTF210301A	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon
800098	PTF210301E	LDMOS RF Power Field Effect Transistor 30 W/ 2110-2170 MHz	Infineon
800099	PTF210451	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz	Infineon

800100	PTF210451E	LDMOS RF Power Field Effect Transistor 45 W/ 2110-2170 MHz	Infineon
800101	PTF210901	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz	Infineon
800102	PTF210901E	LDMOS RF Power Field Effect Transistor 90 W/ 2110-2170 MHz	Infineon
800103	PTF211301	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz	Infineon
800104	PTF211301A	LDMOS RF Power Field Effect Transistor 130 W/ 2110-2170 MHz	Infineon
800105	PTF211802	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon
800106	PTF211802A	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon
800107	PTF211802E	LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz	Infineon
800108	PTFT	Surface Mount Chip, Linear PTC Thermistors, Nickel Barrier, Tin/Lead Wraparound Terminations, Available in Tape and Reel Packaging	Vishay
800109	PTH03000W	6 A, 3.3-V Input Wide-Output Adjust Plug-in Power Module	Texas Instruments
800110	PTH03000WAH	6 A, 3.3-V Input Wide-Output Adjust Plug-in Power Module	Texas Instruments
800111	PTH03000WAS	6 A, 3.3-V Input Wide-Output Adjust Plug-in Power Module	Texas Instruments
800112	PTH03000WAST	6 A, 3.3-V Input Wide-Output Adjust Plug-in Power Module	Texas Instruments
800113	PTH03010W	15 A, 3.3-V Input Wide-Output Adjust Plug-in Power Module	Texas Instruments
800114	PTH03010WAH	15 A, 3.3-V Input Wide-Output Adjust Plug-in Power Module	Texas Instruments
800115	PTH03010WAS	15 A, 3.3-V Input Wide-Output Adjust Plug-in Power Module	Texas Instruments
800116	PTH03010WAST	15 A, 3.3-V Input Wide-Output Adjust Plug-in Power Module	Texas Instruments
800117	PTH03010Y	15 A 3.3-V Input Bus Termination Power Module for DDR/QDR Memory	Texas Instruments
800118	PTH03010YAH	15 A 3.3-V Input Bus Termination Power Module for DDR/QDR Memory	Texas Instruments
800119	PTH03010YAS	15 A 3.3-V Input Bus Termination Power Module for DDR/QDR Memory	Texas Instruments
800120	PTH03010YAST	15 A 3.3-V Input Bus Termination Power Module for DDR/QDR Memory	Texas Instruments

Datasheets found :: 1042530

Page: << | 19998 | 19999 | 20000 | 20001 | 20002 | 20003 | 20004 | 20005 | 20006 | 20007 | 20008 | >>

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