| 798761 | K4N38 | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | Kondenshi Corp |
| 798762 | K4N38A | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | Kodenshi Corp |
| 798763 | K4N38A | Photocoupler(These Photocouplers consist of a Gallium Arsenide Infrared Emitting) | Kondenshi Corp |
| 798764 | K4N56163QF | 256Mbit gDDR2 SDRAM | Samsung Electronic |
| 798765 | K4N56163QF-GC | 256Mbit gDDR2 SDRAM | Samsung Electronic |
| 798766 | K4N56163QF-GC25 | 256Mbit gDDR2 SDRAM | Samsung Electronic |
| 798767 | K4N56163QF-GC30 | 256Mbit gDDR2 SDRAM | Samsung Electronic |
| 798768 | K4N56163QF-GC37 | 256Mbit gDDR2 SDRAM | Samsung Electronic |
| 798769 | K4R271669A | Direct RDRAM | Samsung Electronic |
| 798770 | K4R271669A-N(M)CK7 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 798771 | K4R271669A-N(M)CK8 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 798772 | K4R271669A-NB(M)CCG6 | 256K x 16/18 bit x 2*16 Dependent Banks Direct RDRAMTM | Samsung Electronic |
| 798773 | K4R271669AM-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq. 600 MHz. | Samsung Electronic |
| 798774 | K4R271669AM-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung Electronic |
| 798775 | K4R271669AM-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung Electronic |
| 798776 | K4R271669AN-CG6 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 53.3 ns, I/O freq 600 MHz. | Samsung Electronic |
| 798777 | K4R271669AN-CK7 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 711 MHz. | Samsung Electronic |
| 798778 | K4R271669AN-CK8 | 256K x 16 x 32s dependent banks direct RDRAM. Access time: 45 ns, I/O freq. 800 MHz. | Samsung Electronic |
| 798779 | K4R271669B | Direct RDRAM | Samsung Electronic |
|
| 798780 | K4R271669B | Direct RDRAM™ Data Sheet | Samsung Electronic |
| 798781 | K4R271669B-MCG6 | 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic |
| 798782 | K4R271669B-MCK7 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung Electronic |
| 798783 | K4R271669B-MCK8 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung Electronic |
| 798784 | K4R271669B-N(M)CG6 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung Electronic |
| 798785 | K4R271669B-N(M)CK7 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung Electronic |
| 798786 | K4R271669B-NB(M)CCK8 | 256K x 16/18 bit x 32s banks Direct RDRAMTM | Samsung Electronic |
| 798787 | K4R271669B-NCG6 | 256K x 16 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic |
| 798788 | K4R271669B-NCK7 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz | Samsung Electronic |
| 798789 | K4R271669B-NCK8 | 256K x 16 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz | Samsung Electronic |
| 798790 | K4R271669D | Direct RDRAM™ Data Sheet | Samsung Electronic |
| 798791 | K4R271669D-T | 128Mbit RDRAM(D-die) | Samsung Electronic |
| 798792 | K4R271669D-TCS8 | 128Mbit RDRAM(D-die) | Samsung Electronic |
| 798793 | K4R271669E | 128Mbit RDRAM(E-die) | Samsung Electronic |
| 798794 | K4R271669F | 128Mbit RDRAM(F-die) | Samsung Electronic |
| 798795 | K4R271869B-MCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic |
| 798796 | K4R271869B-MCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung Electronic |
| 798797 | K4R271869B-MCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung Electronic |
| 798798 | K4R271869B-NCG6 | 256K x 18 x 32s banks direct RDRAM. Access time: 53.3 ns, I/O freq.: 600 MHz. | Samsung Electronic |
| 798799 | K4R271869B-NCK7 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 711 MHz. | Samsung Electronic |
| 798800 | K4R271869B-NCK8 | 256K x 18 x 32s banks direct RDRAM. Access time: 45 ns, I/O freq.: 800 MHz. | Samsung Electronic |
