| 755521 | IRF1018ESTRLPBF | 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755522 | IRF1104 | 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755523 | IRF1104L | 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 755524 | IRF1104LPBF | 40V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
| 755525 | IRF1104PBF | 40V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755526 | IRF1104S | 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755527 | IRF1104STRL | 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755528 | IRF1104STRLPBF | 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755529 | IRF1104STRR | 40V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | International Rectifier |
| 755530 | IRF120 | N-Channel Power MOSFETs/ 11 A/ 60-100 V | Fairchild Semiconductor |
| 755531 | IRF120 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 32A. | General Electric Solid State |
| 755532 | IRF120 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs | Intersil |
| 755533 | IRF120 | Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-204AA | New Jersey Semiconductor |
| 755534 | IRF120 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755535 | IRF120-123 | N-Channel Power MOSFETs/ 11 A/ 60-100 V | Fairchild Semiconductor |
| 755536 | IRF121 | N-Channel Power MOSFETs/ 11 A/ 60-100 V | Fairchild Semiconductor |
| 755537 | IRF121 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 32A. | General Electric Solid State |
| 755538 | IRF121 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs | Intersil |
| 755539 | IRF121 | Trans MOSFET N-CH 80V 9.2A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
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| 755540 | IRF121 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755541 | IRF122 | N-Channel Power MOSFETs/ 11 A/ 60-100 V | Fairchild Semiconductor |
| 755542 | IRF122 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 28A. | General Electric Solid State |
| 755543 | IRF122 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs | Intersil |
| 755544 | IRF122 | Trans MOSFET N-CH 100V 9.2A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755545 | IRF122 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755546 | IRF123 | N-Channel Power MOSFETs/ 11 A/ 60-100 V | Fairchild Semiconductor |
| 755547 | IRF123 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current 28A. | General Electric Solid State |
| 755548 | IRF123 | 8.0A and 9.2A/ 80V and 100V/ 0.27 and 0.36 Ohm/ N-Channel/ Power MOSFETs | Intersil |
| 755549 | IRF123 | Trans MOSFET N-CH 80V 8A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755550 | IRF123 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755551 | IRF130 | N-Channel Power MOSFETs/ 20 A/ 60-100 V | Fairchild Semiconductor |
| 755552 | IRF130 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current 56A. | General Electric Solid State |
| 755553 | IRF130 | 100V Single N-Channel Hi-Rel MOSFET in a TO-204AA package | International Rectifier |
| 755554 | IRF130 | 14A/ 100V/ 0.160 Ohm/ N-Channel Power MOSFET | Intersil |
| 755555 | IRF130 | Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 755556 | IRF130 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 755557 | IRF130 | N-CHANNEL POWER MOSFET | SemeLAB |
| 755558 | IRF130-133 | N-Channel Power MOSFETs/ 20 A/ 60-100 V | Fairchild Semiconductor |
| 755559 | IRF1302 | 20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | International Rectifier |
| 755560 | IRF1302L | 20V Single N-Channel HEXFET Power MOSFET in a TO-262 package | International Rectifier |
