DatasheetCatalog.com Logo
  |   Home   |   All manufacturers   |   By Category   |  
Russian version Versão portuguese Versione italiana
Versión española Deutsche Version Version française

   
Quick jump to:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
  LM317   LM339   MAX232   NE555   LM324   8051   7805   2N3055   LM358   2N2222   74LS138   TDA7294   TL431   IRF540   1N4148   G45A


Datasheets found :: 1567829
Page: << | 1779 | 1780 | 1781 | 1782 | 1783 | 1784 | 1785 | 1786 | 1787 | 1788 | 1789 | >>
No.Part NameDescriptionManufacturer
713212N6760E3N-ChannelMicrosemi
713222N6761N-Channel Power MOSFETs/ 4.5A/ 450V/500VFairchild Semiconductor
713232N6761N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.General Electric Solid State
713242N6762N-Channel Power MOSFETs/ 4.5A/ 450V/500VFairchild Semiconductor
713252N6762N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
713262N6762500V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
713272N6762N-ChannelMicrosemi
713282N6762E3N-ChannelMicrosemi
713292N6763N-Channel Power MOSFETs/ 38A/ 60V/100VFairchild Semiconductor
713302N6763FET DEVICES WITH N_CHANNEL POLARITYNew Jersey Semiconductor
713312N6764N-Channel Power MOSFETs/ 38A/ 60V/100VFairchild Semiconductor
713322N6764N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A.General Electric Solid State
713332N6764100V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
713342N6764N-ChannelMicrosemi
713352N6764Trans MOSFET N-CH 100V 38A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
713362N6764N-channel enhancement mode MOSFET power transistorOmnirel
713372N6764E3N-ChannelMicrosemi
713382N6764T1N-ChannelMicrosemi
713392N6764T1E3N-ChannelMicrosemi


713402N6765N-Channel Power MOSFETs/ 30A/ 150V/200VFairchild Semiconductor
713412N6765FET DEVICES WITH N_CHANNEL POLARITYNew Jersey Semiconductor
713422N6766N-Channel Power MOSFETs/ 30A/ 150V/200VFairchild Semiconductor
713432N6766N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.General Electric Solid State
713442N6766200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
713452N6766N-ChannelMicrosemi
713462N6766Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AENew Jersey Semiconductor
713472N6766N-channel enhancement mode MOSFET power transistorOmnirel
713482N6766BX5Trans MOSFET N-CH 200V 30A 3-Pin(2+Tab) TO-204AENew Jersey Semiconductor
713492N6766E3N-ChannelMicrosemi
713502N6766T1N-ChannelMicrosemi
713512N6766T1E3N-ChannelMicrosemi
713522N6767N-Channel Power MOSFETs/ 15A/ 350V/400VFairchild Semiconductor
713532N6767FET DEVICES WITH N_CHANNEL POLARITYNew Jersey Semiconductor
713542N6768N-Channel Power MOSFETs/ 15A/ 350V/400VFairchild Semiconductor
713552N6768400V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
713562N6768N-ChannelMicrosemi
713572N6768Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
713582N6768N-channel enhancement mode MOSFET power transistorOmnirel
713592N6768E3N-ChannelMicrosemi
713602N6768T1N-ChannelMicrosemi


Datasheets found :: 1567829
Page: << | 1779 | 1780 | 1781 | 1782 | 1783 | 1784 | 1785 | 1786 | 1787 | 1788 | 1789 | >>

Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian version Romanian version


© 2019    www.datasheetcatalog.com