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Datasheets found :: 1567829
Page: << | 1778 | 1779 | 1780 | 1781 | 1782 | 1783 | 1784 | 1785 | 1786 | 1787 | 1788 | >>
No.Part NameDescriptionManufacturer
712812N6740 100.000W Medium Power NPN Plastic Leaded Transistor. 400V Vceo, 8.000A Ic, 10 - 40 hFE.Continental Device India Limited
712822N6740POWER TRANSISTORS(8.0A,100W)MOSPEC Semiconductor
712832N6740Silicon NPN Power Transistors TO-220 packageSavantic
712842N67515 A SwitchMax power transistor. High voltage N-P-N type.General Electric Solid State
712852N6751Trans GP BJT NPN 400V 10ANew Jersey Semiconductor
712862N6751Silicon NPN Power Transistors TO-3 packageSavantic
712872N6751Bipolar NPN DeviceSemeLAB
712882N67525 A SwitchMax power transistor. High voltage N-P-N type.General Electric Solid State
712892N6752Trans GP BJT NPN 450V 10ANew Jersey Semiconductor
712902N6752Silicon NPN Power Transistors TO-3 packageSavantic
712912N67535 A SwitchMax power transistor. High voltage N-P-N type.General Electric Solid State
712922N6753Trans GP BJT NPN 500V 10ANew Jersey Semiconductor
712932N6753Silicon NPN Power Transistors TO-3 packageSavantic
712942N6753Bipolar NPN DeviceSemeLAB
712952N67545 A SwitchMax power transistor. High voltage N-P-N type.General Electric Solid State
712962N6754Trans GP BJT NPN 500V 10ANew Jersey Semiconductor
712972N6754Silicon NPN Power Transistors TO-3 packageSavantic
712982N6754Bipolar NPN DeviceSemeLAB
712992N6755N-Channel Power MOSFETs/ 14 A/ 60 A/100 VFairchild Semiconductor


713002N6755N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 60V. Continuous drain current(at Tc 25deg) 12A.General Electric Solid State
713012N6755Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
713022N6756N-Channel Power MOSFETs/ 14 A/ 60 A/100 VFairchild Semiconductor
713032N6756N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 14A.General Electric Solid State
713042N6756100V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
713052N6756N-ChannelMicrosemi
713062N6756Trans MOSFET N-CH 100V 14A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
713072N6756E3N-ChannelMicrosemi
713082N6757N-Channel Power MOSFETs/ 9A/ 150V/200VFairchild Semiconductor
713092N6757N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A.General Electric Solid State
713102N6758N-Channel Power MOSFETs/ 9A/ 150V/200VFairchild Semiconductor
713112N6758N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 9.0A.General Electric Solid State
713122N6758200V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
713132N6758N-ChannelMicrosemi
713142N6758E3N-ChannelMicrosemi
713152N6759N-Channel Power MOSFETs/ 5.5A/ 350V/400VFairchild Semiconductor
713162N6759N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
713172N6760N-Channel Power MOSFETs/ 5.5A/ 350V/400VFairchild Semiconductor
713182N6760N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A.General Electric Solid State
713192N6760400V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
713202N6760N-ChannelMicrosemi


Datasheets found :: 1567829
Page: << | 1778 | 1779 | 1780 | 1781 | 1782 | 1783 | 1784 | 1785 | 1786 | 1787 | 1788 | >>

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