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Datasheets found :: 1675338
Page: << | 1775 | 1776 | 1777 | 1778 | 1779 | 1780 | 1781 | 1782 | 1783 | 1784 | 1785 | >>
No.Part NameDescriptionManufacturer
711612N6514Silicon NPN Power Transistors TO-3 packageSavantic
711622N6515Leaded Small Signal Transistor General PurposeCentral Semiconductor
711632N6515 0.625W General Purpose NPN Plastic Leaded Transistor. 250V Vceo, 0.500A Ic, 35 - hFEContinental Device India Limited
711642N6515NPN Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
711652N6515Ic=500mA, Vce=10V transistorMCC
711662N6515High Voltage Transistor 625mWMicro Commercial Components
711672N6515High Voltage TransistorsON Semiconductor
711682N6515High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.USHA India LTD
711692N6515-DHigh Voltage TransistorsON Semiconductor
711702N6515RLRMHigh Voltage TransistorsON Semiconductor
711712N6516Leaded Small Signal Transistor General PurposeCentral Semiconductor
711722N6516 0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFEContinental Device India Limited
711732N6516NPN Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
711742N6516NPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
711752N6516High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.USHA India LTD
711762N6517Leaded Small Signal Transistor General PurposeCentral Semiconductor
711772N6517 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFEContinental Device India Limited
711782N6517NPN Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
711792N6517Ic=500mA, Vce=10V transistorMCC


711802N6517High Voltage Transistor 625mWMicro Commercial Components
711812N6517High Voltage TransistorsON Semiconductor
711822N6517NPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
711832N6517High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.USHA India LTD
711842N6517NPN SILICON PLANAR MEDIUM POWER TRANSISTORZetex Semiconductors
711852N6517BUNPN Epitaxial Silicon TransistorFairchild Semiconductor
711862N6517CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
711872N6517CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
711882N6517RLRAHigh Voltage TransistorsON Semiconductor
711892N6517RLRPHigh Voltage TransistorsON Semiconductor
711902N6517TANPN Epitaxial Silicon TransistorFairchild Semiconductor
711912N6518Leaded Small Signal Transistor General PurposeCentral Semiconductor
711922N6518PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
711932N6518PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic
711942N6518High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W.USHA India LTD
711952N6518BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
711962N6518TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
711972N6519Leaded Small Signal Transistor General PurposeCentral Semiconductor
711982N6519 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFEContinental Device India Limited
711992N6519PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
712002N6519Ic=500mA, Vce=10V transistorMCC


Datasheets found :: 1675338
Page: << | 1775 | 1776 | 1777 | 1778 | 1779 | 1780 | 1781 | 1782 | 1783 | 1784 | 1785 | >>

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