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Datasheets found :: 1567829
Page: << | 1768 | 1769 | 1770 | 1771 | 1772 | 1773 | 1774 | 1775 | 1776 | 1777 | 1778 | >>
No.Part NameDescriptionManufacturer
708812N6518Leaded Small Signal Transistor General PurposeCentral Semiconductor
708822N6518PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
708832N6518PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic
708842N6518High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W.USHA India LTD
708852N6518BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
708862N6518TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
708872N6519Leaded Small Signal Transistor General PurposeCentral Semiconductor
708882N6519 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFEContinental Device India Limited
708892N6519PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
708902N6519Ic=500mA, Vce=10V transistorMCC
708912N6519High Voltage Transistor 625mWMicro Commercial Components
708922N6519High Voltage TransistorsON Semiconductor
708932N6519PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic
708942N6519High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W.USHA India LTD
708952N6519BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
708962N6519RLRAHigh Voltage TransistorsON Semiconductor
708972N6519TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
708982N651ATrans GP BJT PNP 0.5ANew Jersey Semiconductor
708992N652Trans GP BJT PNP 0.5ANew Jersey Semiconductor


709002N6520Leaded Small Signal Transistor General PurposeCentral Semiconductor
709012N6520 0.625W General Purpose PNP Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFEContinental Device India Limited
709022N6520PNP SILICON PLANAR MEDIUM POWER TRANSISTORDiodes
709032N6520PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
709042N6520Ic=500mA, Vce=10V transistorMCC
709052N6520High Voltage Transistor 625mWMicro Commercial Components
709062N6520High Voltage TransistorsON Semiconductor
709072N6520PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic
709082N6520High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W.USHA India LTD
709092N6520PNP SILICON PLANAR MEDIUM POWER TRANSISTORZetex Semiconductors
709102N6520BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
709112N6520RL1High Voltage TransistorsON Semiconductor
709122N6520RLRAHigh Voltage TransistorsON Semiconductor
709132N6520RLRMHigh Voltage TransistorsON Semiconductor
709142N6520TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
709152N652ATrans GP BJT PNP 0.5ANew Jersey Semiconductor
709162N653Trans GP BJT NPN 350V 0.5A 3-Pin TO-92New Jersey Semiconductor
709172N6530Leaded Power Transistor DarlingtonCentral Semiconductor
709182N65308 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A.General Electric Solid State
709192N6530Trans GP BJT NPN 80V 8A 3-Pin(2+Tab) TO-66New Jersey Semiconductor
709202N6530Silicon NPN Power Transistors TO-220 packageSavantic


Datasheets found :: 1567829
Page: << | 1768 | 1769 | 1770 | 1771 | 1772 | 1773 | 1774 | 1775 | 1776 | 1777 | 1778 | >>

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