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Datasheets found :: 1567829
Page: << | 1722 | 1723 | 1724 | 1725 | 1726 | 1727 | 1728 | 1729 | 1730 | 1731 | 1732 | >>
No.Part NameDescriptionManufacturer
690412N5619Bipolar PNP Device in a Hermetically sealed to3 Metal Package.SemeLAB
690422N5620Silicon NPN Power Transistors TO-3 packageSavantic
690432N5620Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
690442N5621Silicon PNP Power Transistors TO-3 packageSavantic
690452N5622Silicon NPN Power Transistors TO-3 packageSavantic
690462N5622Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
690472N5623Silicon PNP Power Transistors TO-3 packageSavantic
690482N5623Bipolar PNP Device in a Hermetically sealed TO3 Metal PackageSemeLAB
690492N5624Silicon NPN Power Transistors TO-3 packageSavantic
690502N5625Silicon PNP Power Transistors TO-3 packageSavantic
690512N5626Silicon NPN Power Transistors TO-3 packageSavantic
690522N5627Silicon PNP Power Transistors TO-3 packageSavantic
690532N5628Silicon NPN Power Transistors TO-3 packageSavantic
690542N5629COMPLEMENTARY SILICON POWER TRANSISTORSCentral Semiconductor
690552N5629Silicon N-P-N epitaxial-base high-power transistor. 100V, 200W.General Electric Solid State
690562N5629Trans GP BJT NPN 100V 16A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
690572N5629Silicon NPN Power Transistors TO-3 packageSavantic
690582N5630COMPLEMENTARY SILICON POWER TRANSISTORSCentral Semiconductor
690592N5630Silicon N-P-N epitaxial-base high-power transistor. 120V, 200W.General Electric Solid State


690602N5630Collector-emitter/base voltage: 120Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuitsMotorola
690612N5630Trans GP BJT NPN 120V 16A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
690622N5630Silicon NPN Power Transistors TO-3 packageSavantic
690632N5630Bipolar NPN DeviceSemeLAB
690642N5631Silicon N-P-N epitaxial-base high-power transistor. 140V, 200W.General Electric Solid State
690652N5631Collector-emitter/base voltage: 140Vdc; 16Amp; high-voltage, high-power transistor. For high power audio amplifier applications and high voltage switching regulator circuitsMotorola
690662N5631Trans GP BJT NPN 140V 16A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
690672N5631High-Voltage High-Power TransistorsON Semiconductor
690682N5631Silicon NPN Power Transistors TO-3 packageSavantic
690692N5631NPN transistor, 140V, 16ASemeLAB
690702N5631-DHigh-Voltage - High Power TransistorsON Semiconductor
690712N5632Leaded Power Transistor General PurposeCentral Semiconductor
690722N5632Trans GP BJT NPN 100V 10A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
690732N5632Silicon NPN Power Transistors TO-3 packageSavantic
690742N5632Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
690752N5633SILICON POWER TRANSISTORCentral Semiconductor
690762N5633SILICON POWER TRANSISTORCentral Semiconductor
690772N5633Trans GP BJT NPN 120V 15A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
690782N5633Silicon NPN Power Transistors TO-3 packageSavantic
690792N5633Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
690802N5633Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB


Datasheets found :: 1567829
Page: << | 1722 | 1723 | 1724 | 1725 | 1726 | 1727 | 1728 | 1729 | 1730 | 1731 | 1732 | >>

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