| 68921 | 2N5407 | Trans GP BJT PNP 100V 5A 3-Pin TO-5 | New Jersey Semiconductor |
| 68922 | 2N5407 | SMALL SIGNAL PNP TRANSISTORS IN TO-5 | SemeLAB |
| 68923 | 2N540A | Trans GP BJT PNP 120V 0.6A 3-Pin TO-92 Box | New Jersey Semiconductor |
| 68924 | 2N541 | Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-66 Sleeve | New Jersey Semiconductor |
| 68925 | 2N5414 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | SemeLAB |
| 68926 | 2N5415 | HIGH VOLTAGE AMPLIFIERS | Boca Semiconductor Corporation |
| 68927 | 2N5415 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 68928 | 2N5415 | 1.000W General Purpose PNP Metal Can Transistor. 200V Vceo, 1.000A Ic, 30 - 150 hFE. | Continental Device India Limited |
| 68929 | 2N5415 | PNP silicon power transistor. | Fairchild Semiconductor |
| 68930 | 2N5415 | High-voltage silicon P-N-P planar transistor. | General Electric Solid State |
| 68931 | 2N5415 | PNP Transistor | Microsemi |
| 68932 | 2N5415 | Trans GP BJT PNP 200V 1A 3-Pin TO-5 | New Jersey Semiconductor |
| 68933 | 2N5415 | PNP high-voltage transistors | Philips |
| 68934 | 2N5415 | SILICON PNP TRANSISTORS | SGS Thomson Microelectronics |
| 68935 | 2N5415 | SILICON PNP TRANSISTORS | ST Microelectronics |
| 68936 | 2N5415/B | Trans GP BJT PNP 200V 1A 3-Pin TO-39 | New Jersey Semiconductor |
| 68937 | 2N5415CSM4 | PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | SemeLAB |
| 68938 | 2N5415S | PNP Transistor | Microsemi |
| 68939 | 2N5415S | HIGH-VOLTAGE AMPLIFIER | SGS Thomson Microelectronics |
|
| 68940 | 2N5415S | HIGH-VOLTAGE AMPLIFIER | ST Microelectronics |
| 68941 | 2N5415U4 | PNP Transistor | Microsemi |
| 68942 | 2N5415UA | PNP Transistor | Microsemi |
| 68943 | 2N5416 | HIGH VOLTAGE AMPLIFIERS | Boca Semiconductor Corporation |
| 68944 | 2N5416 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 68945 | 2N5416 | 1.000W General Purpose PNP Metal Can Transistor. 300V Vceo, 1.000A Ic, 30 - 120 hFE. | Continental Device India Limited |
| 68946 | 2N5416 | PNP silicon power transistor. | Fairchild Semiconductor |
| 68947 | 2N5416 | High-voltage silicon P-N-P planar transistor. | General Electric Solid State |
| 68948 | 2N5416 | PNP Transistor | Microsemi |
| 68949 | 2N5416 | Trans GP BJT PNP 300V 1A 3-Pin TO-39 Box | New Jersey Semiconductor |
| 68950 | 2N5416 | PNP high-voltage transistors | Philips |
| 68951 | 2N5416 | SILICON PNP TRANSISTORS | SGS Thomson Microelectronics |
| 68952 | 2N5416 | SILICON PNP TRANSISTORS | ST Microelectronics |
| 68953 | 2N5416CSM4 | PNP PLANAR EPITAXIAL TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS | SemeLAB |
| 68954 | 2N5416S | PNP Transistor | Microsemi |
| 68955 | 2N5416S | Trans GP BJT PNP 300V 1A 3-Pin TO-39 | New Jersey Semiconductor |
| 68956 | 2N5416SB | Trans GP BJT PNP 300V 1A 3-Pin TO-39 | New Jersey Semiconductor |
| 68957 | 2N5416SGGGJ | Trans GP BJT PNP 300V 1A 3-Pin TO-39 | New Jersey Semiconductor |
| 68958 | 2N5416U4 | PNP Transistor | Microsemi |
| 68959 | 2N5416UA | PNP Transistor | Microsemi |
| 68960 | 2N542 | Trans GP BJT NPN 80V 7A 3-Pin(2+Tab) TO-66 Sleeve | New Jersey Semiconductor |
