DatasheetCatalog.com Logo
  |   Home   |   All manufacturers   |   By Category   |  
Russian version Versão portuguese Versione italiana
Versión española Deutsche Version Version française

   
Quick jump to:   1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
  LM317   LM339   MAX232   NE555   LM324   8051   7805   2N3055   LM358   2N2222   74LS138   TDA7294   TL431   IRF540   1N4148   G45A


Datasheets found :: 1567829
Page: << | 1719 | 1720 | 1721 | 1722 | 1723 | 1724 | 1725 | 1726 | 1727 | 1728 | 1729 | >>
No.Part NameDescriptionManufacturer
689212N5550TFNPN Epitaxial Silicon TransistorFairchild Semiconductor
689222N5550TFRNPN Epitaxial Silicon TransistorFairchild Semiconductor
689232N5550_D26ZNPN Epitaxial Silicon TransistorFairchild Semiconductor
689242N5550_J24ZNPN Epitaxial Silicon TransistorFairchild Semiconductor
689252N5551NPN Silicon Transistor (General purpose amplifier High voltage application)AUK Corp
689262N5551NPN EPITAXIAL PLANAR SILICON HIGH VOLTAGE TRANSISTORBoca Semiconductor Corporation
689272N5551Leaded Small Signal Transistor General PurposeCentral Semiconductor
689282N5551 0.625W General Purpose NPN Plastic Leaded Transistor. 160V Vceo, 0.600A Ic, 80 - hFEContinental Device India Limited
689292N5551NPN General Purpose AmplifierFairchild Semiconductor
689302N5551NPN Silicon Epitaxial Planar TransistorHoney Technology
689312N5551High Voltage TransistorKorea Electronics (KEC)
689322N5551TO-92 Plastic-Encapsulate Biploar TransistorsMicro Commercial Components
689332N5551SILICON GENERAL PURPOSE HIGH VOLTAGE TRANSISTORSMicro Electronics
689342N5551Amplifier TransistorsMotorola
689352N5551NPN General Purpose AmplifierNational Semiconductor
689362N5551Trans GP BJT NPN 160V 0.6A 3-Pin TO-92 BoxNew Jersey Semiconductor
689372N5551Small Signal Amplifier NPNON Semiconductor
689382N5551NPN high-voltage transistorsPhilips
689392N5551NPN Silicon Expitaxial Planar Transistor for general purpose/ high voltage amplifier applicationsSemtech


689402N5551Amplifier transistor. Collector-emitter voltage: Vceo = 160V. Collector-base voltage: Vcbo = 180V. Collector dissipation: Pc(max) = 625mW.USHA India LTD
689412N5551-TTransistorRectron Semiconductor
689422N5551BUNPN General Purpose AmplifierFairchild Semiconductor
689432N5551CHigh Voltage TransistorKorea Electronics (KEC)
689442N5551CBUNPN General Purpose AmplifierFairchild Semiconductor
689452N5551CTANPN General Purpose AmplifierFairchild Semiconductor
689462N5551HRHi-Rel NPN bipolar transistor 160 V, 0.5 AST Microelectronics
689472N5551HRGHi-Rel NPN bipolar transistor 160 V, 0.5 AST Microelectronics
689482N5551HRTHi-Rel NPN bipolar transistor 160 V, 0.5 AST Microelectronics
689492N5551RHRGHi-Rel NPN bipolar transistor 160 V, 0.5 AST Microelectronics
689502N5551RHRTHi-Rel NPN bipolar transistor 160 V, 0.5 AST Microelectronics
689512N5551RL1Small Signal Amplifier NPNON Semiconductor
689522N5551RLRASmall Signal Amplifier NPNON Semiconductor
689532N5551RLRMSmall Signal Amplifier NPNON Semiconductor
689542N5551RLRPSmall Signal Amplifier NPNON Semiconductor
689552N5551RUBGHi-Rel NPN bipolar transistor 160 V, 0.5 AST Microelectronics
689562N5551RUBTHi-Rel NPN bipolar transistor 160 V, 0.5 AST Microelectronics
689572N5551SHigh Voltage TransistorKorea Electronics (KEC)
689582N5551SCHigh Voltage TransistorKorea Electronics (KEC)
689592N5551SHRTHi-Rel NPN bipolar transistor 160 V, 0.5 AST Microelectronics
689602N5551TANPN General Purpose AmplifierFairchild Semiconductor


Datasheets found :: 1567829
Page: << | 1719 | 1720 | 1721 | 1722 | 1723 | 1724 | 1725 | 1726 | 1727 | 1728 | 1729 | >>

Version française pour cette page Deutsche Version für diese Seite Versión española para esta página Versione italiana per questa pagina Versão portuguese para esta página Russian version Romanian version


© 2019    www.datasheetcatalog.com