| 687681 | HN29W25611T-50H | 256M AND type Flash Memory More than 16/057-sector (271/299/072-bit) | Hitachi Semiconductor |
| 687682 | HN2A01FE | Transistor for low frequency small-signal amplification 2 in 1 | TOSHIBA |
| 687683 | HN2A01FU | Transistor Silicon PNP Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications | TOSHIBA |
| 687684 | HN2A26FS | Transistor for low frequency small-signal amplification 2 in 1 | TOSHIBA |
| 687685 | HN2C01FE | Transistor for low frequency small-signal amplification 2 in 1 | TOSHIBA |
| 687686 | HN2C01FU | Transistor Silicon NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications | TOSHIBA |
| 687687 | HN2C10FT | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS | TOSHIBA |
| 687688 | HN2C10FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 687689 | HN2C11FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 687690 | HN2C12FT | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS | TOSHIBA |
| 687691 | HN2C12FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 687692 | HN2C13FT | RF New Products | TOSHIBA |
| 687693 | HN2C14FT | RF New Products | TOSHIBA |
| 687694 | HN2C26FS | Transistor for low frequency small-signal amplification 2 in 1 | TOSHIBA |
| 687695 | HN2D01F | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 687696 | HN2D01FU | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 687697 | HN2D01JE | Switching diode | TOSHIBA |
| 687698 | HN2D02FU | Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Application | TOSHIBA |
| 687699 | HN2D02FUTW1T1 | Ultra High Speed Switching Diodes | ON Semiconductor |
|
| 687700 | HN2D03F | Switching diode | TOSHIBA |
| 687701 | HN2E04F | Multi-chip discrete device (PNP + SW diode) | TOSHIBA |
| 687702 | HN2S01F | Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application | TOSHIBA |
| 687703 | HN2S01FU | Diode Silicon Epitaxial Schottky Barrier Type Low Voltage High Speed Switching Application | TOSHIBA |
| 687704 | HN2S02FU | Small-signal Schottky barrier diode | TOSHIBA |
| 687705 | HN2S02JE | Small-signal Schottky barrier diode | TOSHIBA |
| 687706 | HN2S03FE | Small-signal Schottky barrier diode | TOSHIBA |
| 687707 | HN2S03FU | Small-signal Schottky barrier diode | TOSHIBA |
| 687708 | HN2S03T | Small-signal Schottky barrier diode | TOSHIBA |
| 687709 | HN2S04FU | Small-signal Schottky barrier diode | TOSHIBA |
| 687710 | HN2V02H | Variable Capacitance Diode AM Radio Band Tuning Applications | TOSHIBA |
| 687711 | HN327 | PNP Silicon Epitaxial Planar Transistor | Honey Technology |
| 687712 | HN327 | PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 687713 | HN328 | PNP Silicon Epitaxial Planar Transistor | Honey Technology |
| 687714 | HN328 | PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 687715 | HN337 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 687716 | HN337 | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 687717 | HN338 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 687718 | HN338 | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 687719 | HN3903 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 687720 | HN3903 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech |
