| 684761 | HM5117805S-7 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 684762 | HM5117805TS-5 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 684763 | HM5117805TS-6 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 684764 | HM5117805TS-7 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 684765 | HM5117805TT-5 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 684766 | HM5117805TT-6 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 684767 | HM5117805TT-7 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 684768 | HM51258P | 262144 word x 1 Bit Static Column CMOS DRAM | Hitachi Semiconductor |
| 684769 | HM514100DLS-6 | 4,194,304-word x 1-bit dynamic RAM, 60ns | Hitachi Semiconductor |
| 684770 | HM514100DLS-7 | 4,194,304-word x 1-bit dynamic RAM, 70ns | Hitachi Semiconductor |
| 684771 | HM514100DLS-8 | 4,194,304-word x 1-bit dynamic RAM, 80ns | Hitachi Semiconductor |
| 684772 | HM514100DS-6 | 4,194,304-word x 1-bit dynamic RAM, 60ns | Hitachi Semiconductor |
| 684773 | HM514100DS-7 | 4,194,304-word x 1-bit dynamic RAM, 70ns | Hitachi Semiconductor |
| 684774 | HM514100DS-8 | 4,194,304-word x 1-bit dynamic RAM, 80ns | Hitachi Semiconductor |
| 684775 | HM514258AJP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684776 | HM514258AJP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684777 | HM514258AJP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684778 | HM514258AJP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684779 | HM514258AJP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
|
| 684780 | HM514258AP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684781 | HM514258AP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684782 | HM514258AP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684783 | HM514258AP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684784 | HM514258AP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684785 | HM514258AZP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684786 | HM514258AZP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684787 | HM514258AZP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684788 | HM514258AZP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684789 | HM514258AZP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 684790 | HM514260AJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory | Hitachi Semiconductor |
| 684791 | HM514260AJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory | Hitachi Semiconductor |
| 684792 | HM514260AJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory | Hitachi Semiconductor |
| 684793 | HM514260ALJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory | Hitachi Semiconductor |
| 684794 | HM514260ALJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory | Hitachi Semiconductor |
| 684795 | HM514260ALJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory | Hitachi Semiconductor |
| 684796 | HM514260ALRR-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory | Hitachi Semiconductor |
| 684797 | HM514260ALRR-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory | Hitachi Semiconductor |
| 684798 | HM514260ALRR-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory | Hitachi Semiconductor |
| 684799 | HM514260ALTT-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory | Hitachi Semiconductor |
| 684800 | HM514260ALTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory | Hitachi Semiconductor |
