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Datasheets found :: 1675338
Page: << | 1676 | 1677 | 1678 | 1679 | 1680 | 1681 | 1682 | 1683 | 1684 | 1685 | 1686 | >>
No.Part NameDescriptionManufacturer
672012N4123Planar epitaxial passivated NPN silicon transistor. 30V, 200mA.General Electric Solid State
672022N4123Ic=200mA, Vce=1.0V transistorMCC
672032N4123NPN Silicon General Purpose Transistor 625mWMicro Commercial Components
672042N4123NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
672052N4123General Purpose Transistors(NPN Silicon)ON Semiconductor
672062N4123NPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
672072N4123General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW.USHA India LTD
672082N4123-DGeneral Purpose Transistors NPN SiliconON Semiconductor
672092N4123BUNPN General Purpose AmplifierFairchild Semiconductor
672102N4123RLRAGeneral Purpose Transistor - NPNON Semiconductor
672112N4123RLRMGeneral Purpose Transistor - NPNON Semiconductor
672122N4123TANPN General Purpose AmplifierFairchild Semiconductor
672132N4123TARNPN General Purpose AmplifierFairchild Semiconductor
672142N4123TFNPN General Purpose AmplifierFairchild Semiconductor
672152N4123TFRNPN General Purpose AmplifierFairchild Semiconductor
672162N4124Leaded Small Signal Transistor General PurposeCentral Semiconductor
672172N4124NPN General Purpose AmplifierFairchild Semiconductor
672182N4124Planar epitaxial passivated NPN silicon transistor. 25V, 200mA.General Electric Solid State
672192N4124Small Signal Transistors (NPN)General Semiconductor


672202N4124Ic=200mA, Vce=1.0V transistorMCC
672212N4124NPN Silicon General Purpose Transistor 625mWMicro Commercial Components
672222N4124NPN SILICON PLANAR EPITAXIAL TRANSISTORMicro Electronics
672232N4124Trans GP BJT NPN 25V 0.2A 3-Pin TO-92 BoxNew Jersey Semiconductor
672242N4124General Purpose Transistor - NPNON Semiconductor
672252N4124NPN general purpose transistorPhilips
672262N4124NPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
672272N412425 V, NPN small signal transistorTRANSYS Electronics Limited
672282N4124NPN SMALL SIGNAL TRANSISTORTRSYS
672292N4124General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW.USHA India LTD
672302N4124Small Signal Transistor (NPN)Vishay
672312N4124BUNPN General Purpose AmplifierFairchild Semiconductor
672322N4124TANPN General Purpose AmplifierFairchild Semiconductor
672332N4124TARNPN General Purpose AmplifierFairchild Semiconductor
672342N4124TFNPN General Purpose AmplifierFairchild Semiconductor
672352N4124TFRNPN General Purpose AmplifierFairchild Semiconductor
672362N4124_J18ZNPN General Purpose AmplifierFairchild Semiconductor
672372N4125Leaded Small Signal Transistor General PurposeCentral Semiconductor
672382N4125PNP General Purpose AmplifierFairchild Semiconductor
672392N4125Planar epitaxial passivated PNP silicon transistor. -30V, 200mA.General Electric Solid State
672402N4125PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic


Datasheets found :: 1675338
Page: << | 1676 | 1677 | 1678 | 1679 | 1680 | 1681 | 1682 | 1683 | 1684 | 1685 | 1686 | >>


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