| 67201 | 2N4123 | Planar epitaxial passivated NPN silicon transistor. 30V, 200mA. | General Electric Solid State |
| 67202 | 2N4123 | Ic=200mA, Vce=1.0V transistor | MCC |
| 67203 | 2N4123 | NPN Silicon General Purpose Transistor 625mW | Micro Commercial Components |
| 67204 | 2N4123 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
| 67205 | 2N4123 | General Purpose Transistors(NPN Silicon) | ON Semiconductor |
| 67206 | 2N4123 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 67207 | 2N4123 | General purpose transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 40V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 67208 | 2N4123-D | General Purpose Transistors NPN Silicon | ON Semiconductor |
| 67209 | 2N4123BU | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67210 | 2N4123RLRA | General Purpose Transistor - NPN | ON Semiconductor |
| 67211 | 2N4123RLRM | General Purpose Transistor - NPN | ON Semiconductor |
| 67212 | 2N4123TA | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67213 | 2N4123TAR | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67214 | 2N4123TF | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67215 | 2N4123TFR | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67216 | 2N4124 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 67217 | 2N4124 | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67218 | 2N4124 | Planar epitaxial passivated NPN silicon transistor. 25V, 200mA. | General Electric Solid State |
| 67219 | 2N4124 | Small Signal Transistors (NPN) | General Semiconductor |
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| 67220 | 2N4124 | Ic=200mA, Vce=1.0V transistor | MCC |
| 67221 | 2N4124 | NPN Silicon General Purpose Transistor 625mW | Micro Commercial Components |
| 67222 | 2N4124 | NPN SILICON PLANAR EPITAXIAL TRANSISTOR | Micro Electronics |
| 67223 | 2N4124 | Trans GP BJT NPN 25V 0.2A 3-Pin TO-92 Box | New Jersey Semiconductor |
| 67224 | 2N4124 | General Purpose Transistor - NPN | ON Semiconductor |
| 67225 | 2N4124 | NPN general purpose transistor | Philips |
| 67226 | 2N4124 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 67227 | 2N4124 | 25 V, NPN small signal transistor | TRANSYS Electronics Limited |
| 67228 | 2N4124 | NPN SMALL SIGNAL TRANSISTOR | TRSYS |
| 67229 | 2N4124 | General purpose transistor. Collector-emitter voltage: Vceo = 25V. Collector-base voltage: Vcbo = 30V. Collector dissipation: Pc(max) = 625mW. | USHA India LTD |
| 67230 | 2N4124 | Small Signal Transistor (NPN) | Vishay |
| 67231 | 2N4124BU | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67232 | 2N4124TA | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67233 | 2N4124TAR | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67234 | 2N4124TF | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67235 | 2N4124TFR | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67236 | 2N4124_J18Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 67237 | 2N4125 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 67238 | 2N4125 | PNP General Purpose Amplifier | Fairchild Semiconductor |
| 67239 | 2N4125 | Planar epitaxial passivated PNP silicon transistor. -30V, 200mA. | General Electric Solid State |
| 67240 | 2N4125 | PNP EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
