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Datasheets found :: 1675338
Page: << | 1646 | 1647 | 1648 | 1649 | 1650 | 1651 | 1652 | 1653 | 1654 | 1655 | 1656 | >>
No.Part NameDescriptionManufacturer
660012N3423BIPOLAR DEVICES WITH POLARITY NPNNew Jersey Semiconductor
660022N3424Trans GP BJT NPN 60V 3A 3-Pin TO-5New Jersey Semiconductor
660032N342ATrans GP BJT NPN 60V 3A 3-Pin TO-5New Jersey Semiconductor
660042N343Trans GP BJT NPN 140V 10A 3-Pin(2+Tab) TO-3 SleeveNew Jersey Semiconductor
660052N3439HIGH VOLTAGE AMPLIFIERSBoca Semiconductor Corporation
660062N3439Leaded Small Signal Transistor General PurposeCentral Semiconductor
660072N3439 1.000W General Purpose NPN Metal Can Transistor. 350V Vceo, 1.000A Ic, 40 - 160 hFE.Continental Device India Limited
660082N3439High-voltage silicon N-P-N planar transistor.General Electric Solid State
660092N3439NPN TransistorMicrosemi
660102N3439Trans GP BJT NPN 350V 1A 3-Pin TO-39 BoxNew Jersey Semiconductor
660112N3439HIGH VOLTAGE NPN TRANSISTORSSemeLAB
660122N3439SILICON NPN TRANSISTORSSGS Thomson Microelectronics
660132N3439SILICON NPN TRANSISTORSSGS Thomson Microelectronics
660142N3439SILICON NPN TRANSISTORSST Microelectronics
660152N3439CSM4HIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONSSemeLAB
660162N3439CSM4RHIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONSSemeLAB
660172N3439E3NPN TransistorMicrosemi
660182N3439E4NPN TransistorMicrosemi
660192N3439LNPN TransistorMicrosemi


660202N3439LE3NPN TransistorMicrosemi
660212N3439U4NPN TransistorMicrosemi
660222N3439U4E3NPN TransistorMicrosemi
660232N3439UANPN TransistorMicrosemi
660242N3439UAE3NPN TransistorMicrosemi
660252N343ATrans GP BJT NPN 350V 1A 3-Pin TO-5New Jersey Semiconductor
660262N343BTrans GP BJT NPN 350V 1A 3-Pin TO-5New Jersey Semiconductor
660272N343CTrans GP BJT NPN 350V 1A 3-Pin TO-5New Jersey Semiconductor
660282N3440HIGH VOLTAGE AMPLIFIERSBoca Semiconductor Corporation
660292N3440Leaded Small Signal Transistor General PurposeCentral Semiconductor
660302N3440 1.000W High Voltage NPN Metal Can Transistor. 250V Vceo, 1.000A Ic, 40 - 160 hFE.Continental Device India Limited
660312N3440High-voltage silicon N-P-N planar transistor.General Electric Solid State
660322N3440NPN TransistorMicrosemi
660332N3440Trans GP BJT NPN 250V 1A 3-Pin TO-39New Jersey Semiconductor
660342N3440HIGH VOLTAGE NPN TRANSISTORSSemeLAB
660352N3440SILICON NPN TRANSISTORSSGS Thomson Microelectronics
660362N3440SILICON NPN TRANSISTORSSGS Thomson Microelectronics
660372N3440SILICON NPN TRANSISTORSST Microelectronics
660382N3440CSM4RHIGH VOLTAGE, MEDIUM POWER, NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONSSemeLAB
660392N3440E3NPN TransistorMicrosemi
660402N3440E4NPN TransistorMicrosemi


Datasheets found :: 1675338
Page: << | 1646 | 1647 | 1648 | 1649 | 1650 | 1651 | 1652 | 1653 | 1654 | 1655 | 1656 | >>


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