| 647121 | HM5117805TS-5 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 647122 | HM5117805TS-6 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 647123 | HM5117805TS-7 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 647124 | HM5117805TT-5 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 647125 | HM5117805TT-6 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 647126 | HM5117805TT-7 | 16 M EDO DRAM (2-Mword X 8-bit) 2 k Refresh | Elpida Memory |
| 647127 | HM51258P | 262144 word x 1 Bit Static Column CMOS DRAM | Hitachi Semiconductor |
| 647128 | HM514100DLS-6 | 4,194,304-word x 1-bit dynamic RAM, 60ns | Hitachi Semiconductor |
| 647129 | HM514100DLS-7 | 4,194,304-word x 1-bit dynamic RAM, 70ns | Hitachi Semiconductor |
| 647130 | HM514100DLS-8 | 4,194,304-word x 1-bit dynamic RAM, 80ns | Hitachi Semiconductor |
| 647131 | HM514100DS-6 | 4,194,304-word x 1-bit dynamic RAM, 60ns | Hitachi Semiconductor |
| 647132 | HM514100DS-7 | 4,194,304-word x 1-bit dynamic RAM, 70ns | Hitachi Semiconductor |
| 647133 | HM514100DS-8 | 4,194,304-word x 1-bit dynamic RAM, 80ns | Hitachi Semiconductor |
| 647134 | HM514258AJP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647135 | HM514258AJP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647136 | HM514258AJP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647137 | HM514258AJP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647138 | HM514258AJP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647139 | HM514258AP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
|
| 647140 | HM514258AP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647141 | HM514258AP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647142 | HM514258AP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647143 | HM514258AP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647144 | HM514258AZP-10 | 100ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647145 | HM514258AZP-12 | 120ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647146 | HM514258AZP-6 | 60ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647147 | HM514258AZP-7 | 70ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647148 | HM514258AZP-8 | 80ns; V(cc/t): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM | Hitachi Semiconductor |
| 647149 | HM514260AJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory | Hitachi Semiconductor |
| 647150 | HM514260AJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory | Hitachi Semiconductor |
| 647151 | HM514260AJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory | Hitachi Semiconductor |
| 647152 | HM514260ALJ-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiò random access memory | Hitachi Semiconductor |
| 647153 | HM514260ALJ-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory | Hitachi Semiconductor |
| 647154 | HM514260ALJ-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory | Hitachi Semiconductor |
| 647155 | HM514260ALRR-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÇ random access memory | Hitachi Semiconductor |
| 647156 | HM514260ALRR-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÔ random access memory | Hitachi Semiconductor |
| 647157 | HM514260ALRR-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiã random access memory | Hitachi Semiconductor |
| 647158 | HM514260ALTT-10 | 100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiñ random access memory | Hitachi Semiconductor |
| 647159 | HM514260ALTT-7 | 70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamié random access memory | Hitachi Semiconductor |
| 647160 | HM514260ALTT-8 | 80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynamiÓ random access memory | Hitachi Semiconductor |
