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Datasheets found :: 1567829
Page: << | 15382 | 15383 | 15384 | 15385 | 15386 | 15387 | 15388 | 15389 | 15390 | 15391 | 15392 | >>
No.Part NameDescriptionManufacturer
615441IRF821N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.5A.General Electric Solid State
615442IRF821N-CHANNEL Enhancement-Mode Silicon Gate TMOSMotorola
615443IRF821N-CHANNEL POWER MOSFETSSamsung Electronic
615444IRF821N-channel MOSFET, 450V, 2.5ASGS Thomson Microelectronics
615445IRF821FIN-channel MOSFET, 450V, 2.0ASGS Thomson Microelectronics
615446IRF822N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 VFairchild Semiconductor
615447IRF822N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 2.0A.General Electric Solid State
615448IRF822N-CHANNEL POWER MOSFETSSamsung Electronic
615449IRF822N-channel enhancement mode power MOS transistor, 500V, 2.8ASGS Thomson Microelectronics
615450IRF822FIN-channel enhancement mode power MOS transistor, 500V, 1.9ASGS Thomson Microelectronics
615451IRF822FIN CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORSST Microelectronics
615452IRF823N-Channel Power MOSFETs/ 3.0 A/ 450 V/500 VFairchild Semiconductor
615453IRF823N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 2.0A.General Electric Solid State
615454IRF823N-CHANNEL Enhancement-Mode Silicon Gate TMOSMotorola
615455IRF823N-CHANNEL POWER MOSFETSSamsung Electronic
615456IRF823N-channel MOSFET, 450V, 2.2ASGS Thomson Microelectronics
615457IRF823FIN-channel MOSFET, 450V, 1.5ASGS Thomson Microelectronics
615458IRF825225V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC convertersInternational Rectifier
615459IRF8252PBF-125V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageInternational Rectifier


615460IRF8252TRPBF25V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed for high efficiency DC-DC convertersInternational Rectifier
615461IRF8252TRPBF-125V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 packageInternational Rectifier
615462IRF82FIN CHANNEL ENHANCEMENT MODE POWER MOSTRANSISTORSST Microelectronics
615463IRF830POWER MOSFETBayLinear
615464IRF8304.5A, 500V, 1.500 Ohm, N-Channel Power MOSFETFairchild Semiconductor
615465IRF830N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
615466IRF830500V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
615467IRF8304.5A/ 500V/ 1.500 Ohm/ N-Channel Power MOSFETIntersil
615468IRF830Trans MOSFET N-CH 500V 4.5A 3-Pin(3+Tab) TO-220ABNew Jersey Semiconductor
615469IRF830Power Field Effect TransistorON Semiconductor
615470IRF830PowerMOS transistor Avalanche energy ratedPhilips
615471IRF830N - CHANNEL 500V - 1.35W - 4.5A - TO-220 PowerMESH MOSFETSGS Thomson Microelectronics
615472IRF830N-CHANNEL 500V - 1.35 OHM - 4.5A - TO-220 POWERMESH MOSFETST Microelectronics
615473IRF830500 V,power field effect transistorTRANSYS Electronics Limited
615474IRF830N-CHANNEL ENHANCEMENT MODETRSYS
615475IRF830-DPower Field Effect Transistor N-Channel Enhancement Mode Silicon Gate TMOSON Semiconductor
615476IRF8301MA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance.International Rectifier
615477IRF8301MTRPBFA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MT package rated at 34 amperes optimized with low on resistance.International Rectifier
615478IRF8302M30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance.International Rectifier
615479IRF8302MTR1PBF30V Single N-Channel HEXFET Power MOSFET and Schottky Diode in a DirectFET MX package rated at 31 amperes optimized with low on resistance.International Rectifier
615480IRF8304MA 30V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 28 amperes optimized with low on resistance.International Rectifier


Datasheets found :: 1567829
Page: << | 15382 | 15383 | 15384 | 15385 | 15386 | 15387 | 15388 | 15389 | 15390 | 15391 | 15392 | >>

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