| 613241 | IRF231 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A. | General Electric Solid State |
| 613242 | IRF231 | 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs | Intersil |
| 613243 | IRF231 | Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 613244 | IRF231 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 613245 | IRF231R | Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 613246 | IRF232 | N-Channel Power MOSFETs/ 12A/ 150-200 V | Fairchild Semiconductor |
| 613247 | IRF232 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A. | General Electric Solid State |
| 613248 | IRF232 | 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs | Intersil |
| 613249 | IRF232 | Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 613250 | IRF232 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 613251 | IRF232R | Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 613252 | IRF233 | N-Channel Power MOSFETs/ 12A/ 150-200 V | Fairchild Semiconductor |
| 613253 | IRF233 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A. | General Electric Solid State |
| 613254 | IRF233 | 8.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETs | Intersil |
| 613255 | IRF233 | Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 613256 | IRF233 | N-CHANNEL POWER MOSFETS | Samsung Electronic |
| 613257 | IRF234 | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | Intersil |
| 613258 | IRF235 | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | Intersil |
| 613259 | IRF236 | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | Intersil |
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| 613260 | IRF237 | 8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs | Intersil |
| 613261 | IRF240 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 613262 | IRF240 | 200V Single N-Channel Hi-Rel MOSFET in a TO-204AE package | International Rectifier |
| 613263 | IRF240 | 18A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFET | Intersil |
| 613264 | IRF240 | Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3 | New Jersey Semiconductor |
| 613265 | IRF240 | N-CHANNEL POWER MOSFET | Samsung Electronic |
| 613266 | IRF240 | N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS | SemeLAB |
| 613267 | IRF240-243 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 613268 | IRF240SMD | N.CHANNEL POWER MOSFET | SemeLAB |
| 613269 | IRF241 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 613270 | IRF241 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A. | General Electric Solid State |
| 613271 | IRF241 | 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs | Intersil |
| 613272 | IRF241 | N-CHANNEL POWER MOSFET | Samsung Electronic |
| 613273 | IRF242 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 613274 | IRF242 | 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs | Intersil |
| 613275 | IRF242 | N-CHANNEL POWER MOSFET | Samsung Electronic |
| 613276 | IRF243 | N-Channel Power MOSFETs/ 18A/ 150-200V | Fairchild Semiconductor |
| 613277 | IRF243 | N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A. | General Electric Solid State |
| 613278 | IRF243 | 16A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETs | Intersil |
| 613279 | IRF243 | N-CHANNEL POWER MOSFET | Samsung Electronic |
| 613280 | IRF244 | 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs | Intersil |
