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Datasheets found :: 1567829
Page: << | 15327 | 15328 | 15329 | 15330 | 15331 | 15332 | 15333 | 15334 | 15335 | 15336 | 15337 | >>
No.Part NameDescriptionManufacturer
613241IRF231N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 9.0A.General Electric Solid State
613242IRF2318.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
613243IRF231Trans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
613244IRF231N-CHANNEL POWER MOSFETSSamsung Electronic
613245IRF231RTrans MOSFET N-CH 150V 9A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
613246IRF232N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
613247IRF232N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 8.0A.General Electric Solid State
613248IRF2328.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
613249IRF232Trans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
613250IRF232N-CHANNEL POWER MOSFETSSamsung Electronic
613251IRF232RTrans MOSFET N-CH 200V 7.3A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
613252IRF233N-Channel Power MOSFETs/ 12A/ 150-200 VFairchild Semiconductor
613253IRF233N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 8.0A.General Electric Solid State
613254IRF2338.0A and 9.0A/ 150V and 200V/ 0.4 and 0.6 Ohm/ N-Channel Power MOSFETsIntersil
613255IRF233Trans MOSFET N-CH 150V 7.3A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
613256IRF233N-CHANNEL POWER MOSFETSSamsung Electronic
613257IRF2348.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
613258IRF2358.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
613259IRF2368.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil


613260IRF2378.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETsIntersil
613261IRF240N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
613262IRF240200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
613263IRF24018A/ 200V/ 0.180 Ohm/ N-Channel Power MOSFETIntersil
613264IRF240Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3New Jersey Semiconductor
613265IRF240N-CHANNEL POWER MOSFETSamsung Electronic
613266IRF240N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONSSemeLAB
613267IRF240-243N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
613268IRF240SMDN.CHANNEL POWER MOSFETSemeLAB
613269IRF241N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
613270IRF241N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 18A.General Electric Solid State
613271IRF24116A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
613272IRF241N-CHANNEL POWER MOSFETSamsung Electronic
613273IRF242N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
613274IRF24216A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
613275IRF242N-CHANNEL POWER MOSFETSamsung Electronic
613276IRF243N-Channel Power MOSFETs/ 18A/ 150-200VFairchild Semiconductor
613277IRF243N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 150V. Continuous drain current(at Tc 25deg) 16A.General Electric Solid State
613278IRF24316A and 18A, 200V and 150V, 0.18 and 0.22 Ohm, N-Channel Power MOSFETsIntersil
613279IRF243N-CHANNEL POWER MOSFETSamsung Electronic
613280IRF24414A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETsIntersil


Datasheets found :: 1567829
Page: << | 15327 | 15328 | 15329 | 15330 | 15331 | 15332 | 15333 | 15334 | 15335 | 15336 | 15337 | >>

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