| 596441 | F1B2CAI | Fast Recovery Diode | Korea Electronics (KEC) |
| 596442 | F1B2CC | STACK SILICON DIFFUSED DIODE (HIGH SPEED RECTIFIER) | Korea Electronics (KEC) |
| 596443 | F1B2CCI | Fast Recovery Diode | Korea Electronics (KEC) |
| 596444 | F1T1 | Rectifier: Fast | Taiwan Semiconductor |
| 596445 | F1T1G | Rectifier: Fast | Taiwan Semiconductor |
| 596446 | F1T2 | Rectifier: Fast | Taiwan Semiconductor |
| 596447 | F1T2G | Rectifier: Fast | Taiwan Semiconductor |
| 596448 | F1T3 | Rectifier: Fast | Taiwan Semiconductor |
| 596449 | F1T3G | Rectifier: Fast | Taiwan Semiconductor |
| 596450 | F1T4 | Rectifier: Fast | Taiwan Semiconductor |
| 596451 | F1T4G | Rectifier: Fast | Taiwan Semiconductor |
| 596452 | F1T5 | Rectifier: Fast | Taiwan Semiconductor |
| 596453 | F1T5G | Rectifier: Fast | Taiwan Semiconductor |
| 596454 | F1T6 | Rectifier: Fast | Taiwan Semiconductor |
| 596455 | F1T6G | Rectifier: Fast | Taiwan Semiconductor |
| 596456 | F1T7 | Rectifier: Fast | Taiwan Semiconductor |
| 596457 | F1T7G | Rectifier: Fast | Taiwan Semiconductor |
| 596458 | F2 | Case, shape and dimensions | IPRS Baneasa |
| 596459 | F2 | Shape and dimensions SITELESC package | SESCOSEM |
|
| 596460 | F2 SERIES | TIMING EXTRACTION BANDPASS FILTER (1.5 to 100MHz) | Fujitsu Microelectronics |
| 596461 | F20 | Diode Switching 2KV 0.35A 2-Pin Case G-66 | New Jersey Semiconductor |
| 596462 | F2001 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596463 | F2002 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596464 | F2003 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596465 | F2004 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596466 | F2012 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596467 | F2013 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596468 | F202 | Silicon rectifier diode | IPRS Baneasa |
| 596469 | F202 | Silicon Rectifier Diode 2A 200V | IPRS Baneasa |
| 596470 | F202 | 2A 200V Rectifier Diode | IPRS Baneasa |
| 596471 | F2021 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596472 | F2041 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596473 | F2046 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596474 | F2047 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596475 | F2048 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596476 | F2049 | PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR | Polyfet RF Devices |
| 596477 | F207 | Silicon rectifier diode | IPRS Baneasa |
| 596478 | F207 | Silicon Rectifier Diode 0.75A 400V | IPRS Baneasa |
| 596479 | F207 | 0.75A 400V Rectifier Diode | IPRS Baneasa |
| 596480 | F207 | Previous Vectron Model Numbers | Vectron |
