| Nr. | Part Name | Description | Manufacturer by |
| 58601 | 2SD640 | SILICON NPN TRIPLE DIFFUSEO TYPE | TOSHIBA |
| 58602 | 2SD641 | SILICON NPN TRIPLE DIFFUSED TYPE | TOSHIBA |
| 58603 | 2SD641 | SILICON NPN TRIPLE DIFFUSED TYPE | TOSHIBA |
| 58604 | 2SD647A | SILICON NPN TRIPLE DIFFUSED MEGA TYPE | TOSHIBA |
| 58605 | 2SD647A | SILICON NPN TRIPLE DIFFUSED MEGA TYPE | TOSHIBA |
| 58606 | 2SD648A | SILICON NPN TRIPLE DIFFUSED MEGA TYPE | TOSHIBA |
| 58607 | 2SD648A | SILICON NPN TRIPLE DIFFUSED MEGA TYPE | TOSHIBA |
| 58608 | 2SD649 | Si NPN triple diffused junction mesa. Line-operated horizontal deflection output. | Panasonic |
| 58609 | 2SD655 | Silicon NPN Transistor | Hitachi Semiconductor |
| 58610 | 2SD655 | Silicon NPN Epitaxial | Hitachi Semiconductor |
| 58611 | 2SD655 | Transistors>Amplifiers/Bipolar | Renesas |
| 58612 | 2SD661 | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) | Panasonic |
| 58613 | 2SD661 | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) | Panasonic |
| 58614 | 2SD661A | Silicon PNP epitaxial planer type(For low-frequency and low-noise amplification) | Panasonic |
| 58615 | 2SD661A | Silicon NPN epitaxial planer type(For low-frequency and low-noise amplification) | Panasonic |
| 58616 | 2SD662 | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires | Panasonic |
| 58617 | 2SD662B | Small-signal device - Small-signal transistor - General-use Low-Frequency Amplifires | Panasonic |
| 58618 | 2SD666 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A | Hitachi Semiconductor |
| 58619 | 2SD666 | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A | Hitachi Semiconductor |
| 58620 | 2SD666A | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A | Hitachi Semiconductor |
| 58621 | 2SD666A | LOW FREQUENCY HIGH VOLTAGE AMPLIFIER Complementary pair with 2SB646/A | Hitachi Semiconductor |
| 58622 | 2SD667 | Silicon NPN Transistor | Hitachi Semiconductor |
| 58623 | 2SD667 | Silicon NPN Epitaxial | Hitachi Semiconductor |
| 58624 | 2SD667 | Transistors>Amplifiers/Bipolar | Renesas |
| 58625 | 2SD667A | Silicon NPN Transistor | Hitachi Semiconductor |
| 58626 | 2SD667A | Silicon NPN Epitaxial | Hitachi Semiconductor |
| 58627 | 2SD667A | Transistors>Amplifiers/Bipolar | Renesas |
| 58628 | 2SD669 | Silicon NPN Transistor | Hitachi Semiconductor |
| 58629 | 2SD669 | Silicon NPN Epitaxial | Hitachi Semiconductor |
| 58630 | 2SD669A | Silicon NPN Transistor | Hitachi Semiconductor |
| 58631 | 2SD669A | Silicon NPN Epitaxial | Hitachi Semiconductor |
| 58632 | 2SD673A | LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD673A | Unknow |
| 58633 | 2SD673A | LOW FREQUENCY POWER AMPLIFIER Complementary pair with 2SD673A | Unknow |
| 58634 | 2SD687 | SILICON NPN EPITAXIAL TYPE(PCT PROCESS) | TOSHIBA |
| 58635 | 2SD687 | SILICON NPN EPITAXIAL TYPE(PCT PROCESS) | TOSHIBA |
| 58636 | 2SD688 | SILICON NPN EPITAXIAL (PCT PROCESS) | TOSHIBA |
| 58637 | 2SD688 | SILICON NPN EPITAXIAL (PCT PROCESS) | TOSHIBA |
| 58638 | 2SD691 | Si NPN diffused junction mesa. High power amplifier. | Panasonic |
| 58639 | 2SD692 | Si NPN diffused junction mesa. High power amplifier. | Panasonic |
| 58640 | 2SD693 | Si NPN triple diffused mesa. High power switching. | Panasonic |
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