| 58321 | 1N8158 | Low Capacitance TVS | Microsemi |
| 58322 | 1N8158E3 | Low Capacitance TVS | Microsemi |
| 58323 | 1N8159 | Low Capacitance TVS | Microsemi |
| 58324 | 1N8159E3 | Low Capacitance TVS | Microsemi |
| 58325 | 1N816 | Leaded Zener Diode Stabistor | Central Semiconductor |
| 58326 | 1N816 | Constant-voltage reference diode | Motorola |
| 58327 | 1N816 | Silicon Signal Diode | Motorola |
| 58328 | 1N8160 | Low Capacitance TVS | Microsemi |
| 58329 | 1N8160E3 | Low Capacitance TVS | Microsemi |
| 58330 | 1N8161 | Low Capacitance TVS | Microsemi |
| 58331 | 1N8161US | Low Capacitance TVS | Microsemi |
| 58332 | 1N817 | Silicon Signal Diode | Motorola |
| 58333 | 1N818 | Silicon Planar Diode | ITT Semiconductors |
| 58334 | 1N818 | Silicon Signal Diode | Motorola |
| 58335 | 1N819 | Silicon Signal Diode | Motorola |
| 58336 | 1N81A | Gold Bond Germanium Diode | ITT Semiconductors |
| 58337 | 1N81A | Germanium Signal Diode | Motorola |
| 58338 | 1N81A | GOLD BOUNDED GERMANUM DIODE | New Jersey Semiconductor |
| 58339 | 1N81H | Diode Schottky 20V 1A 2-Pin DO-41 | New Jersey Semiconductor |
|
| 58340 | 1N82 | Silicon Diode - Microwave Mixer - to 1,000 MHz; NF=16 to 14 dB | Motorola |
| 58341 | 1N82 | Diode Switching 50V 0.005A 2-Pin Case H | New Jersey Semiconductor |
| 58342 | 1N821 | TEMPERATURE COMPENSATED ZENER REFERENCE DIODES | Compensated Devices Incorporated |
| 58343 | 1N821 | Voltage reference diode | mble |
| 58344 | 1N821 | 0TC Reference Voltage Zener | Microsemi |
| 58345 | 1N821 | 0TC Reference Voltage Zener | Microsemi |
| 58346 | 1N821 | Temperature-compesated zener reference diode | Motorola |
| 58347 | 1N821 | Reference Diode | Motorola |
| 58348 | 1N821 | TEMPERATURECOMPENSATED SILICON ZENER REFERENCE DIODES 6.2 V, 400 mW | Motorola |
| 58349 | 1N821 | Diode Zener Single 6.2V 5% 500mW 2-Pin DO-35 | New Jersey Semiconductor |
| 58350 | 1N821 | Voltage reference diodes | Philips |
| 58351 | 1N821 | Voltage reference diode (temperature compensated)Silicon signal diode - high voltage switching | SESCOSEM |
| 58352 | 1N821 | Silicon Voltage Reference Diode temperature compensated 6.2V, Military Version USN/JAN | Transitron Electronic |
| 58353 | 1N821 (DO35) | 0TC Reference Voltage Zener | Microsemi |
| 58354 | 1N821-1 | 6.2 & 6.55 VOLT TEMPERATURE COMPENSATED ZENER REFERENCE DIODES | Microsemi |
| 58355 | 1N821-1E3 | Temperature Compensated Zeners (TCZ) | Microsemi |
| 58356 | 1N821A | Leaded Zener Diode Temperature Compensated | Central Semiconductor |
| 58357 | 1N821A | TEMPERATURE COMPENSATED ZENER REFERENCE DIODES | Compensated Devices Incorporated |
| 58358 | 1N821A | 0TC Reference Voltage Zener | Microsemi |
| 58359 | 1N821A | 0TC Reference Voltage Zener | Microsemi |
| 58360 | 1N821A | Temperature-compesated zener reference diode | Motorola |
