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Datasheets found :: 1351361Page: << | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | 14195 | 14196 | 14197 | 14198 | >>
Nr.Part NameDescriptionManufacturer by
567681IRF330N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A.General Electric Solid State
567682IRF330-333N-Channel Power MOSFETs/ 5.5A/ 350 V/400VFairchild Semiconductor
567683IRF330555V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567684IRF331N-Channel Power MOSFETs/ 5.5A/ 350 V/400VFairchild Semiconductor
567685IRF331N-CHANNEL POWER MOSFETSSamsung Electronic
567686IRF331N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 5.5A.General Electric Solid State
567687IRF3314.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETsIntersil
567688IRF3315150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567689IRF3315L150V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567690IRF3315PBF150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567691IRF3315S150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567692IRF3315STRL150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567693IRF3315STRR150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567694IRF332N-Channel Power MOSFETs/ 5.5A/ 350 V/400VFairchild Semiconductor
567695IRF332N-CHANNEL POWER MOSFETSSamsung Electronic
567696IRF332N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
567697IRF3324.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETsIntersil
567698IRF333N-Channel Power MOSFETs/ 5.5A/ 350 V/400VFairchild Semiconductor



567699IRF333N-CHANNEL POWER MOSFETSSamsung Electronic
567700IRF333N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
567701IRF3334.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETsIntersil
567702IRF340400V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
567703IRF340N-Channel Power MOSFETs/ 10A/ 350V/400VFairchild Semiconductor
567704IRF340N-CHANNEL POWER MOSFETSSamsung Electronic
567705IRF34010A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETsIntersil
567706IRF340-343N-Channel Power MOSFETs/ 10A/ 350V/400VFairchild Semiconductor
567707IRF341N-Channel Power MOSFETs/ 10A/ 350V/400VFairchild Semiconductor
567708IRF341N-CHANNEL POWER MOSFETSSamsung Electronic
567709IRF3415150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567710IRF3415L150V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567711IRF3415LPBF150V Single N-Channel HEXFET Power MOSFET in a TO-262 packageInternational Rectifier
567712IRF3415PBF150V Single N-Channel HEXFET Power MOSFET in a TO-220AB packageInternational Rectifier
567713IRF3415S150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567714IRF3415SPBF150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567715IRF3415STRL150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567716IRF3415STRR150V Single N-Channel HEXFET Power MOSFET in a D2-Pak packageInternational Rectifier
567717IRF341IRF34210A and 8.3A, 400V and 350V, 0.55 and 0.80 Ohm, N-Channel Power MOSFETsIntersil
567718IRF342N-Channel Power MOSFETs/ 10A/ 350V/400VFairchild Semiconductor
567719IRF342N-CHANNEL POWER MOSFETSSamsung Electronic
567720IRF343N-Channel Power MOSFETs/ 10A/ 350V/400VFairchild Semiconductor



Datasheets found :: 1351361Page: << | 14188 | 14189 | 14190 | 14191 | 14192 | 14193 | 14194 | 14195 | 14196 | 14197 | 14198 | >>
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