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Datasheets found :: 1351361Page: << | 1228 | 1229 | 1230 | 1231 | 1232 | 1233 | 1234 | 1235 | 1236 | 1237 | 1238 | >>
Nr.Part NameDescriptionManufacturer by
492812N6759N-Channel Power MOSFETs/ 5.5A/ 350V/400VFairchild Semiconductor
492822N6759N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 350V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
492832N6760400V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
492842N6760N-Channel Power MOSFETs/ 5.5A/ 350V/400VFairchild Semiconductor
492852N6760N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 400V. Continuous drain current(at Tc 25deg) 5.5A.General Electric Solid State
492862N6761N-Channel Power MOSFETs/ 4.5A/ 450V/500VFairchild Semiconductor
492872N6761N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 450V. Continuous drain current(at Tc 25deg) 4.0A.General Electric Solid State
492882N6762500V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
492892N6762N-Channel Power MOSFETs/ 4.5A/ 450V/500VFairchild Semiconductor
492902N6762N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 500V. Continuous drain current(at Tc 25deg) 4.5A.General Electric Solid State
492912N6763N-Channel Power MOSFETs/ 38A/ 60V/100VFairchild Semiconductor
492922N6764100V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
492932N6764N-Channel Power MOSFETs/ 38A/ 60V/100VFairchild Semiconductor
492942N6764N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 100V. Continuous drain current(at Tc 25deg) 38A.General Electric Solid State
492952N6764N-channel enhancement mode MOSFET power transistorOmnirel
492962N6765N-Channel Power MOSFETs/ 30A/ 150V/200VFairchild Semiconductor
492972N6766200V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
492982N6766N-Channel Power MOSFETs/ 30A/ 150V/200VFairchild Semiconductor



492992N6766N-channel enhancement-mode power field-effect transistor. Drain-sourge voltage 200V. Continuous drain current(at Tc 25deg) 30A.General Electric Solid State
493002N6766N-channel enhancement mode MOSFET power transistorOmnirel
493012N6767N-Channel Power MOSFETs/ 15A/ 350V/400VFairchild Semiconductor
493022N6768400V Single N-Channel Hi-Rel MOSFET in a TO-204AE packageInternational Rectifier
493032N6768N-Channel Power MOSFETs/ 15A/ 350V/400VFairchild Semiconductor
493042N6768N-channel enhancement mode MOSFET power transistorOmnirel
493052N6769N-Channel Power MOSFETs/ 12A/ 450V/500VFairchild Semiconductor
493062N6770500V Single N-Channel Hi-Rel MOSFET in a TO-204AA packageInternational Rectifier
493072N6770N-Channel Power MOSFETs/ 12A/ 450V/500VFairchild Semiconductor
493082N6770N-channel enhancement mode MOSFET power transistorOmnirel
493092N678160 V, 06 ohm, N-channel enhancement-mode D-MOS power FETTopaz Semiconductor
493102N6782100V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageInternational Rectifier
493112N6782N-CHANNEL POWER MOSFETSemeLAB
493122N6782N-channel enhancement-mode power field-effect transistor. 3.5 A, 100V.General Electric Solid State
493132N6782100 V, 06 ohm, N-channel enhancement-mode D-MOS power FETTopaz Semiconductor
493142N6782LCC4N-CHANNEL POWER MOSFETSemeLAB
493152N6784200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageInternational Rectifier
493162N6786400V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageInternational Rectifier
493172N6786N-Channel MOSFET in a Hermetically sealed TO39 Metal PackageSemeLAB
493182N6788100V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageInternational Rectifier
493192N6788N-channel enhancement-mode power field-effect transistor. 6.0 A, 100V.General Electric Solid State
493202N6790200V Single N-Channel Hi-Rel MOSFET in a TO-205AF packageInternational Rectifier



Datasheets found :: 1351361Page: << | 1228 | 1229 | 1230 | 1231 | 1232 | 1233 | 1234 | 1235 | 1236 | 1237 | 1238 | >>
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