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Datasheets found :: 1351361Page: << | 1223 | 1224 | 1225 | 1226 | 1227 | 1228 | 1229 | 1230 | 1231 | 1232 | 1233 | >>
Nr.Part NameDescriptionManufacturer by
490812N657ALeaded Small Signal Transistor General PurposeCentral Semiconductor
490822N6581Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
490832N6583Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
490842N6594POWER TRANSISTORS(12A,40V,100W)MOSPEC Semiconductor
490852N6594PNP SILICON POWER TRANSISTORBoca Semiconductor Corporation
490862N6594Leaded Power Transistor General PurposeCentral Semiconductor
490872N660SCRsCentral Semiconductor
490882N660SCRsCentral Semiconductor
490892N6605Leaded Thyristor SCRCentral Semiconductor
490902N6606Leaded Thyristor SCRCentral Semiconductor
490912N6607Leaded Thyristor SCRCentral Semiconductor
490922N6608Leaded Thyristor SCRCentral Semiconductor
490932N6609POWER TRANSISTORS(16A,140V,150W)MOSPEC Semiconductor
490942N6609COMPLEMENTARY SILICON POWER TRANSISTORSBoca Semiconductor Corporation
490952N6609Leaded Power Transistor General PurposeCentral Semiconductor
490962N6609Power 16A 140V Discrete PNPON Semiconductor
490972N6609Silicon P-N-P epitaxial-base high-power transistor. -160V, 150W.General Electric Solid State
490982N661912 V, 30 mA, NPN silicon transistor for low-noise RF broadband amplifier and high-speed switching applicationSiemens



490992N6620NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIERSiemens
491002N6620NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIERSiemens
491012N662125 V, 25 mA, NPN silicon RF broadband transistorSiemens
491022N6648PNP Darlington TransistorMicrosemi
491032N6648POWER TRANSISTORS(10A,100W)MOSPEC Semiconductor
491042N6648Leaded Power Transistor DarlingtonCentral Semiconductor
491052N664810 A P-N-P darlington power transistor. -40 V. 70 W. Gain of 1000 at 5 A.General Electric Solid State
491062N6649PNP Darlington TransistorMicrosemi
491072N6649POWER TRANSISTORS(10A,100W)MOSPEC Semiconductor
491082N6649Leaded Power Transistor DarlingtonCentral Semiconductor
491092N664910 A P-N-P darlington power transistor. -60 V. 70 W. Gain of 1000 at 5 A.General Electric Solid State
491102N6650PNP Darlington TransistorMicrosemi
491112N6650POWER TRANSISTORS(10A,100W)MOSPEC Semiconductor
491122N6650Leaded Power Transistor DarlingtonCentral Semiconductor
491132N665010 A P-N-P darlington power transistor. -80 V. 70 W. Gain of 1000 at 5 A.General Electric Solid State
491142N6653Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.SemeLAB
491152N6654Bipolar NPN Device in a Hermetically sealed TO3 Metal PackageSemeLAB
491162N6655Bipolar NPN DeviceSemeLAB
491172N6659N-CHANNEL ENHANCEMENT MODE MOS TRANSISTORSemeLAB
491182N6659TMOS SWITCHING FET TRANSISTORSMotorola
491192N6660TMOS SWITCHING FET TRANSISTORSMotorola
491202N6660N-Channel Enhancement-Mode Vertical DMOS FETsSupertex Inc



Datasheets found :: 1351361Page: << | 1223 | 1224 | 1225 | 1226 | 1227 | 1228 | 1229 | 1230 | 1231 | 1232 | 1233 | >>
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