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Datasheets found :: 1351361Page: << | 1220 | 1221 | 1222 | 1223 | 1224 | 1225 | 1226 | 1227 | 1228 | 1229 | 1230 | >>
Nr.Part NameDescriptionManufacturer by
489612N6516 0.625W General Purpose NPN Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFEContinental Device India Limited
489622N6516High voltage transistor. Collector-emitter voltage: Vceo = 250V. Collector-base voltage: Vcbo = 250V. Collector dissipation: Pc(max) = 625mW.USHA India LTD
489632N6517NPN Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
489642N6517NPN SILICON PLANAR MEDIUM POWER TRANSISTORZetex Semiconductors
489652N6517High Voltage Transistor 625mWMicro Commercial Components
489662N6517Leaded Small Signal Transistor General PurposeCentral Semiconductor
489672N6517High Voltage TransistorsON Semiconductor
489682N6517NPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
489692N6517 0.625W General Purpose NPN Plastic Leaded Transistor. 350V Vceo, 0.500A Ic, 20 - hFEContinental Device India Limited
489702N6517Ic=500mA, Vce=10V transistorMCC
489712N6517High voltage transistor. Collector-emitter voltage: Vceo = 350V. Collector-base voltage: Vcbo = 350V. Collector dissipation: Pc(max) = 625mW.USHA India LTD
489722N6517BUNPN Epitaxial Silicon TransistorFairchild Semiconductor
489732N6517CBUNPN Epitaxial Silicon TransistorFairchild Semiconductor
489742N6517CTANPN Epitaxial Silicon TransistorFairchild Semiconductor
489752N6517RLRAHigh Voltage TransistorsON Semiconductor
489762N6517RLRPHigh Voltage TransistorsON Semiconductor
489772N6517TANPN Epitaxial Silicon TransistorFairchild Semiconductor
489782N6518PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor



489792N6518Leaded Small Signal Transistor General PurposeCentral Semiconductor
489802N6518PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic
489812N6518High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W.USHA India LTD
489822N6518BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
489832N6518TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
489842N6519PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
489852N6519High Voltage Transistor 625mWMicro Commercial Components
489862N6519Leaded Small Signal Transistor General PurposeCentral Semiconductor
489872N6519High Voltage TransistorsON Semiconductor
489882N6519PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic
489892N6519 0.625W General Purpose PNP Plastic Leaded Transistor. 300V Vceo, 0.500A Ic, 30 - hFEContinental Device India Limited
489902N6519Ic=500mA, Vce=10V transistorMCC
489912N6519High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W.USHA India LTD
489922N6519BUPNP Epitaxial Silicon TransistorFairchild Semiconductor
489932N6519RLRAHigh Voltage TransistorsON Semiconductor
489942N6519TAPNP Epitaxial Silicon TransistorFairchild Semiconductor
489952N6520PNP Epitaxial Silicon Transistor - High Voltage TransistorFairchild Semiconductor
489962N6520PNP SILICON PLANAR MEDIUM POWER TRANSISTORZetex Semiconductors
489972N6520High Voltage Transistor 625mWMicro Commercial Components
489982N6520Leaded Small Signal Transistor General PurposeCentral Semiconductor
489992N6520High Voltage TransistorsON Semiconductor
490002N6520PNP EPITAXIAL SILICON TRANSISTORSamsung Electronic



Datasheets found :: 1351361Page: << | 1220 | 1221 | 1222 | 1223 | 1224 | 1225 | 1226 | 1227 | 1228 | 1229 | 1230 | >>
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