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Datasheets found :: 1351361Page: << | 1216 | 1217 | 1218 | 1219 | 1220 | 1221 | 1222 | 1223 | 1224 | 1225 | 1226 | >>
Nr.Part NameDescriptionManufacturer by
488012N6430 0.500W General Purpose NPN Metal Can Transistor. 200V Vceo, 0.050A Ic, 25 hFE.Continental Device India Limited
488022N6431Leaded Small Signal Transistor General PurposeCentral Semiconductor
488032N6432Leaded Small Signal Transistor General PurposeCentral Semiconductor
488042N6433Leaded Small Signal Transistor General PurposeCentral Semiconductor
488052N6436POWER TRANSISTORS(25A,200W)MOSPEC Semiconductor
488062N6436HIGH-POWER PNP SILICON TRANSISTORSBoca Semiconductor Corporation
488072N6437POWER TRANSISTORS(25A,200W)MOSPEC Semiconductor
488082N6437HIGH-POWER PNP SILICON TRANSISTORSBoca Semiconductor Corporation
488092N6437POWER TRANSISTORS PNP SILICONON Semiconductor
488102N6437-DHigh-Power PNP Silicon TransistorsON Semiconductor
488112N6438POWER TRANSISTORS(25A,200W)MOSPEC Semiconductor
488122N6438HIGH-POWER PNP SILICON TRANSISTORSBoca Semiconductor Corporation
488132N6438POWER TRANSISTORS PNP SILICONON Semiconductor
488142N6439POWER TRANSISTORTyco Electronics
488152N643960 W, 225 to 400 MHz CONTROLLED °Q± BROADBAND RF POWER TRANSISTOR NPN SILICONMotorola
488162N643960 W,NPN silicon RF power transistorMA-Com
488172N6449N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488182N6449N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation



488192N6450N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488202N6450N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488212N6451N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488222N6452N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488232N6453N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488242N6453N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488252N6454N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488262N6454N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
488272N6461Bipolar NPN Device in a Hermetically sealed TO39 Metal PackageSemeLAB
488282N6462Bipolar NPN DeviceSemeLAB
488292N6462Bipolar NPN DeviceSemeLAB
488302N6463Bipolar NPN Device in a Hermetically sealed TO39 Metal PackageSemeLAB
488312N6464Bipolar NPN DeviceSemeLAB
488322N6465Leaded Power Transistor General PurposeCentral Semiconductor
488332N6465Bipolar NPN DeviceSemeLAB
488342N6466Leaded Power Transistor General PurposeCentral Semiconductor
488352N6467Leaded Power Transistor General PurposeCentral Semiconductor
488362N6467Bipolar PNP DeviceSemeLAB
488372N6467Silicon P-N-P medium-power transistor. -110V, 40W.General Electric Solid State
488382N6468Bipolar PNP DeviceSemeLAB
488392N6468Leaded Power Transistor General PurposeCentral Semiconductor
488402N6468Silicon P-N-P medium-power transistor. -130V, 40W.General Electric Solid State



Datasheets found :: 1351361Page: << | 1216 | 1217 | 1218 | 1219 | 1220 | 1221 | 1222 | 1223 | 1224 | 1225 | 1226 | >>
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