| 48081 | 1N5524A-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48082 | 1N5524AUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48083 | 1N5524AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48084 | 1N5524B | Leaded Zener Diode General Purpose | Central Semiconductor |
| 48085 | 1N5524B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48086 | 1N5524B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
| 48087 | 1N5524B | Low Voltage Avalanche Zener | Microsemi |
| 48088 | 1N5524B | Low Voltage Avalanche Zener | Microsemi |
| 48089 | 1N5524B | Diode Zener Single 5.6V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48090 | 1N5524B (DO35) | Low Voltage Avalanche Zener | Microsemi |
| 48091 | 1N5524B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 48092 | 1N5524B-1 | Low Voltage Avalanche Zener | Microsemi |
| 48093 | 1N5524B-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48094 | 1N5524BUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48095 | 1N5524BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48096 | 1N5524C | Leaded Zener Diode General Purpose | Central Semiconductor |
| 48097 | 1N5524C | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-2% tolerance. | Jinan Gude Electronic Device |
| 48098 | 1N5524C | Diode Zener Single 5.6V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48099 | 1N5524C-1 | Low Voltage Avalanche Zener | Microsemi |
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| 48100 | 1N5524C-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48101 | 1N5524CUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48102 | 1N5524CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48103 | 1N5524D | Leaded Zener Diode General Purpose | Central Semiconductor |
| 48104 | 1N5524D | 0.4 W, low voltage avalanche diode. Nominal zener voltage 5.6 V. Test current 3.0 mAdc. +-1% tolerance. | Jinan Gude Electronic Device |
| 48105 | 1N5524D | Diode Zener Single 5.6V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48106 | 1N5524D-1 | Low Voltage Avalanche Zener | Microsemi |
| 48107 | 1N5524D-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48108 | 1N5524DUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48109 | 1N5524DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48110 | 1N5525 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 48111 | 1N5525 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
| 48112 | 1N5525 | Low Voltage Avalanche Zener | Microsemi |
| 48113 | 1N5525 | Diode Zener Single 6.2V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48114 | 1N5525A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 6.2 V. Test current 1.0 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
| 48115 | 1N5525A | Low Voltage Avalanche Zener | Microsemi |
| 48116 | 1N5525A | Diode Zener Single 6.2V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 48117 | 1N5525A-1 | Low Voltage Avalanche Zener | Microsemi |
| 48118 | 1N5525A-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 48119 | 1N5525AUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 48120 | 1N5525AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
