| 47841 | 1N54A | Germanium Point Contact Diode | IPRS Baneasa |
| 47842 | 1N54A | Gold Bond Germanium Diode | ITT Semiconductors |
| 47843 | 1N54A | Germanium Signal diode | Motorola |
| 47844 | 1N54A | GOLD BONDED GERMANIUM DIODES | New Jersey Semiconductor |
| 47845 | 1N54A | Tungsten point contact germanium diode - general purpose | SESCOSEM |
| 47846 | 1N55 | Gold Bond Germanium Diode | ITT Semiconductors |
| 47847 | 1N55 | Germanium Signal diode | Motorola |
| 47848 | 1N55 | GOLD BOUNDED GERMANUM DIODE | New Jersey Semiconductor |
| 47849 | 1N550 | Rectifier Diode | Motorola |
| 47850 | 1N550 | Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 47851 | 1N551 | Rectifier Diode | Motorola |
| 47852 | 1N551 | Diode Zener Single 8.2V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 47853 | 1N5517 | SCHOTTKY RECTIERS SILICON RECTIFIER DIODES | Unknow |
| 47854 | 1N5518 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 47855 | 1N5518 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 47856 | 1N5518 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
| 47857 | 1N5518 | Low Voltage Avalanche Zener | Microsemi |
| 47858 | 1N5518 | Diode Zener Single 3.3V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 47859 | 1N5518-1 | LOW VOLTAGE AVALANCHE DIODES DO-35 | Microsemi |
|
| 47860 | 1N5518A | 0.4W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
| 47861 | 1N5518A | Low Voltage Avalanche Zener | Microsemi |
| 47862 | 1N5518A | Diode Zener Single 3.3V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 47863 | 1N5518A-1 | Low Voltage Avalanche Zener | Microsemi |
| 47864 | 1N5518A-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 47865 | 1N5518AUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 47866 | 1N5518AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 47867 | 1N5518B | Leaded Zener Diode General Purpose | Central Semiconductor |
| 47868 | 1N5518B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 47869 | 1N5518B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 3.3 V. Test current 20 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
| 47870 | 1N5518B | Low Voltage Avalanche Zener | Microsemi |
| 47871 | 1N5518B | Low Voltage Avalanche Zener | Microsemi |
| 47872 | 1N5518B | Diode Zener Single 3.3V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 47873 | 1N5518B (DO35) | Low Voltage Avalanche Zener | Microsemi |
| 47874 | 1N5518B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 47875 | 1N5518B-1 | Low Voltage Avalanche Zener | Microsemi |
| 47876 | 1N5518B-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 47877 | 1N5518BUR | Zener Voltage Regulator Diode | Microsemi |
| 47878 | 1N5518BUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 47879 | 1N5518BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 47880 | 1N5518C | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
