| Nr. | Part Name | Description | Manufacturer by |
| 38721 | 2N6620 | NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER | Siemens |
| 38722 | 2N6620 | NPN SILICON TRANSISTOR FOR LOW NOISE RF BROADBAND AMPLIFIER | Siemens |
| 38723 | 2N6648 | PNP Darlington Transistor | Microsemi |
| 38724 | 2N6648 | POWER TRANSISTORS(10A,100W) | MOSPEC Semiconductor |
| 38725 | 2N6648 | Leaded Power Transistor Darlington | Central Semiconductor |
| 38726 | 2N6649 | PNP Darlington Transistor | Microsemi |
| 38727 | 2N6649 | POWER TRANSISTORS(10A,100W) | MOSPEC Semiconductor |
| 38728 | 2N6649 | Leaded Power Transistor Darlington | Central Semiconductor |
| 38729 | 2N6650 | PNP Darlington Transistor | Microsemi |
| 38730 | 2N6650 | POWER TRANSISTORS(10A,100W) | MOSPEC Semiconductor |
| 38731 | 2N6650 | Leaded Power Transistor Darlington | Central Semiconductor |
| 38732 | 2N6653 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package. | SemeLAB |
| 38733 | 2N6654 | Bipolar NPN Device in a Hermetically sealed TO3 Metal Package | SemeLAB |
| 38734 | 2N6655 | Bipolar NPN Device | SemeLAB |
| 38735 | 2N6659 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | SemeLAB |
| 38736 | 2N6659 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 38737 | 2N6660 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 38738 | 2N6660 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 38739 | 2N6660 | N-Channel 60-V (D-S) Single and Quad MOSFETs | Vishay |
| 38740 | 2N6661 | N-CHANNEL ENHANCEMENT MODE MOS TRANSISTOR | SemeLAB |
| 38741 | 2N6661 | TMOS SWITCHING FET TRANSISTORS | Motorola |
| 38742 | 2N6661 | N-Channel Enhancement-Mode Vertical DMOS FETs | Supertex Inc |
| 38743 | 2N6661 | N-Channel 80-V and 90-V (D-S) MOSFETS | Vishay |
| 38744 | 2N6666 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 38745 | 2N6666 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 38746 | 2N6666 | Leaded Power Transistor Darlington | Central Semiconductor |
| 38747 | 2N6667 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 38748 | 2N6667 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 38749 | 2N6667 | Leaded Power Transistor Darlington | Central Semiconductor |
| 38750 | 2N6667 | Power 8A 60V Darlington PNP | ON Semiconductor |
| 38751 | 2N6667-D | Darlington Silicon Power Transistors | ON Semiconductor |
| 38752 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | ST Microelectronics |
| 38753 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | SGS Thomson Microelectronics |
| 38754 | 2N6668 | SILICON PNP POWER DARLINGTON TRANSISTOR | SGS Thomson Microelectronics |
| 38755 | 2N6668 | POWER TRANSISTORS(65W) | MOSPEC Semiconductor |
| 38756 | 2N6668 | PLASTIC MEDIUM-POWER SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 38757 | 2N6668 | Leaded Power Transistor Darlington | Central Semiconductor |
| 38758 | 2N6668 | Power 8A 80V Darlington PNP | ON Semiconductor |
| 38759 | 2N6671 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 38760 | 2N6672 | Leaded Power Transistor General Purpose | Central Semiconductor |
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