| Nr. | Part Name | Description | Manufacturer by |
| 38481 | 2N6427_D26Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 38482 | 2N6427_D27Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 38483 | 2N6427_D75Z | NPN Darlington Transistor | Fairchild Semiconductor |
| 38484 | 2N6428 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 38485 | 2N6428 | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 38486 | 2N6428A | NPN EPITAXIAL SILICON TRANSISTOR | Samsung Electronic |
| 38487 | 2N6430 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 38488 | 2N6431 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 38489 | 2N6432 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 38490 | 2N6433 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 38491 | 2N6436 | POWER TRANSISTORS(25A,200W) | MOSPEC Semiconductor |
| 38492 | 2N6436 | HIGH-POWER PNP SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 38493 | 2N6437 | POWER TRANSISTORS(25A,200W) | MOSPEC Semiconductor |
| 38494 | 2N6437 | HIGH-POWER PNP SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 38495 | 2N6437 | POWER TRANSISTORS PNP SILICON | ON Semiconductor |
| 38496 | 2N6437-D | High-Power PNP Silicon Transistors | ON Semiconductor |
| 38497 | 2N6438 | POWER TRANSISTORS(25A,200W) | MOSPEC Semiconductor |
| 38498 | 2N6438 | HIGH-POWER PNP SILICON TRANSISTORS | Boca Semiconductor Corporation |
| 38499 | 2N6438 | POWER TRANSISTORS PNP SILICON | ON Semiconductor |
| 38500 | 2N6439 | POWER TRANSISTOR | Tyco Electronics |
| 38501 | 2N6439 | 60 W, 225 to 400 MHz CONTROLLED °Q± BROADBAND RF POWER TRANSISTOR NPN SILICON | Motorola |
| 38502 | 2N6449 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38503 | 2N6449 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38504 | 2N6450 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38505 | 2N6450 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38506 | 2N6451 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38507 | 2N6452 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38508 | 2N6453 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38509 | 2N6453 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38510 | 2N6454 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38511 | 2N6454 | N-Channel Silicon Junction Field-Effect Transistor | InterFET Corporation |
| 38512 | 2N6461 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | SemeLAB |
| 38513 | 2N6462 | Bipolar NPN Device | SemeLAB |
| 38514 | 2N6462 | Bipolar NPN Device | SemeLAB |
| 38515 | 2N6463 | Bipolar NPN Device in a Hermetically sealed TO39 Metal Package | SemeLAB |
| 38516 | 2N6464 | Bipolar NPN Device | SemeLAB |
| 38517 | 2N6465 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 38518 | 2N6465 | Bipolar NPN Device | SemeLAB |
| 38519 | 2N6466 | Leaded Power Transistor General Purpose | Central Semiconductor |
| 38520 | 2N6467 | Leaded Power Transistor General Purpose | Central Semiconductor |
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