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Datasheets found :: 1042530Page: << | 958 | 959 | 960 | 961 | 962 | 963 | 964 | 965 | 966 | 967 | 968 | >>
Nr.Part NameDescriptionManufacturer by
384812N6427_D26ZNPN Darlington TransistorFairchild Semiconductor
384822N6427_D27ZNPN Darlington TransistorFairchild Semiconductor
384832N6427_D75ZNPN Darlington TransistorFairchild Semiconductor
384842N6428Leaded Small Signal Transistor General PurposeCentral Semiconductor
384852N6428NPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
384862N6428ANPN EPITAXIAL SILICON TRANSISTORSamsung Electronic
384872N6430Leaded Small Signal Transistor General PurposeCentral Semiconductor
384882N6431Leaded Small Signal Transistor General PurposeCentral Semiconductor
384892N6432Leaded Small Signal Transistor General PurposeCentral Semiconductor
384902N6433Leaded Small Signal Transistor General PurposeCentral Semiconductor
384912N6436POWER TRANSISTORS(25A,200W)MOSPEC Semiconductor
384922N6436HIGH-POWER PNP SILICON TRANSISTORSBoca Semiconductor Corporation
384932N6437POWER TRANSISTORS(25A,200W)MOSPEC Semiconductor
384942N6437HIGH-POWER PNP SILICON TRANSISTORSBoca Semiconductor Corporation
384952N6437POWER TRANSISTORS PNP SILICONON Semiconductor
384962N6437-DHigh-Power PNP Silicon TransistorsON Semiconductor
384972N6438POWER TRANSISTORS(25A,200W)MOSPEC Semiconductor
384982N6438HIGH-POWER PNP SILICON TRANSISTORSBoca Semiconductor Corporation



384992N6438POWER TRANSISTORS PNP SILICONON Semiconductor
385002N6439POWER TRANSISTORTyco Electronics
385012N643960 W, 225 to 400 MHz CONTROLLED °Q± BROADBAND RF POWER TRANSISTOR NPN SILICONMotorola
385022N6449N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385032N6449N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385042N6450N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385052N6450N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385062N6451N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385072N6452N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385082N6453N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385092N6453N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385102N6454N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385112N6454N-Channel Silicon Junction Field-Effect TransistorInterFET Corporation
385122N6461Bipolar NPN Device in a Hermetically sealed TO39 Metal PackageSemeLAB
385132N6462Bipolar NPN DeviceSemeLAB
385142N6462Bipolar NPN DeviceSemeLAB
385152N6463Bipolar NPN Device in a Hermetically sealed TO39 Metal PackageSemeLAB
385162N6464Bipolar NPN DeviceSemeLAB
385172N6465Leaded Power Transistor General PurposeCentral Semiconductor
385182N6465Bipolar NPN DeviceSemeLAB
385192N6466Leaded Power Transistor General PurposeCentral Semiconductor
385202N6467Leaded Power Transistor General PurposeCentral Semiconductor
Datasheets found :: 1042530Page: << | 958 | 959 | 960 | 961 | 962 | 963 | 964 | 965 | 966 | 967 | 968 | >>
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