| Nr. | Part Name | Description | Manufacturer by |
| 382601 | HN338 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 382602 | HN338 | NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 382603 | HN3903 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 382604 | HN3903 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 382605 | HN3904 | NPN Silicon Epitaxial Planar Transistor | Honey Technology |
| 382606 | HN3904 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 382607 | HN3905 | PNP Silicon Epitaxial Planar Transistor | Honey Technology |
| 382608 | HN3905 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 382609 | HN3906 | PNP Silicon Epitaxial Planar Transistor | Honey Technology |
| 382610 | HN3906 | NPN Silicon Expitaxial Planar Transistor for switching and amplifier applications | Semtech |
| 382611 | HN3B01F | PNP EPITAXIAL TYPE (AUDIO FREQUENCY GENERAL PURPOSE AMPLIFIER APPLICATIONS) | TOSHIBA |
| 382612 | HN3B02FU | Transistor Silicon PNP·NPN Epitaxial Type (PCT Process) Audio Frequency General Purpose Amplifier Applications | TOSHIBA |
| 382613 | HN3C01F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382614 | HN3C01FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382615 | HN3C02F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382616 | HN3C02FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382617 | HN3C03F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382618 | HN3C03FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382619 | HN3C09F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382620 | HN3C09FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382621 | HN3C10F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382622 | HN3C10FE | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS | TOSHIBA |
| 382623 | HN3C10FT | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS | TOSHIBA |
| 382624 | HN3C10FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382625 | HN3C11F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382626 | HN3C11FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382627 | HN3C12 | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | TOSHIBA |
| 382628 | HN3C12F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382629 | HN3C12FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382630 | HN3C13F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382631 | HN3C13FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382632 | HN3C14 | NPN EPITAXIAL PLANAR TYPE (VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS) | TOSHIBA |
| 382633 | HN3C14F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382634 | HN3C14FT | TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE VHF~UHF BAND LOW NOISE AMPLIFIER APPLICATIONS | TOSHIBA |
| 382635 | HN3C14FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382636 | HN3C15F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382637 | HN3C15FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382638 | HN3C16F | RF 2-in-1 Hybrid Transistors | TOSHIBA |
| 382639 | HN3C16FT | RF New Products | TOSHIBA |
| 382640 | HN3C16FU | RF 2-in-1 Hybrid Transistors | TOSHIBA |
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