| 37641 | 1N5526D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 37642 | 1N5526D | Diode Zener Single 6.8V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37643 | 1N5526D-1 | Low Voltage Avalanche Zener | Microsemi |
| 37644 | 1N5526D-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37645 | 1N5526DUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 37646 | 1N5526DUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37647 | 1N5527 | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 37648 | 1N5527 | LOW VOLTAGE AVALANCHE ZENER DIODES HIGH PERFORMANCE: LOW NOISE, LOW LEAKAGE | Knox Semiconductor Inc |
| 37649 | 1N5527 | Low Voltage Avalanche Zener | Microsemi |
| 37650 | 1N5527 | Diode Zener Single 7.5V 20% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37651 | 1N5527A | 0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-10% tolerance. | Jinan Gude Electronic Device |
| 37652 | 1N5527A | Low Voltage Avalanche Zener | Microsemi |
| 37653 | 1N5527A | Diode Zener Single 7.5V 10% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37654 | 1N5527A-1 | Low Voltage Avalanche Zener | Microsemi |
| 37655 | 1N5527A-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37656 | 1N5527AUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 37657 | 1N5527AUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37658 | 1N5527B | Leaded Zener Diode General Purpose | Central Semiconductor |
| 37659 | 1N5527B | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
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| 37660 | 1N5527B | 0.4 W, low voltage avalanche diode. Nominal zener voltage 7.5 V. Test current 1.0 mAdc. +-5% tolerance. | Jinan Gude Electronic Device |
| 37661 | 1N5527B | Low Voltage Avalanche Zener | Microsemi |
| 37662 | 1N5527B | Low Voltage Avalanche Zener | Microsemi |
| 37663 | 1N5527B | Diode Zener Single 7.5V 5% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37664 | 1N5527B (DO35) | Low Voltage Avalanche Zener | Microsemi |
| 37665 | 1N5527B-1 | LOW REVERSE LEAKAGE CHARACTERISTICS | Compensated Devices Incorporated |
| 37666 | 1N5527B-1 | Low Voltage Avalanche Zener | Microsemi |
| 37667 | 1N5527B-1 | Diode Zener Single 7.5V 5% 500mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37668 | 1N5527B-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37669 | 1N5527BUR | Zener Voltage Regulator Diode | Microsemi |
| 37670 | 1N5527BUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 37671 | 1N5527BUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37672 | 1N5527C | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 37673 | 1N5527C | Diode Zener Single 7.5V 2% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37674 | 1N5527C-1 | Low Voltage Avalanche Zener | Microsemi |
| 37675 | 1N5527C-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37676 | 1N5527CUR-1 | Low Voltage Avalanche Zener | Microsemi |
| 37677 | 1N5527CUR-1E3 | Low Voltage Avalanche Zener | Microsemi |
| 37678 | 1N5527D | 0.4W LOW VOLTAGE AVALANCHE DIODES | Jinan Gude Electronic Device |
| 37679 | 1N5527D | Diode Zener Single 7.5V 1% 400mW 2-Pin DO-35 | New Jersey Semiconductor |
| 37680 | 1N5527D-1 | Low Voltage Avalanche Zener | Microsemi |
