| Nr. | Part Name | Description | Manufacturer by |
| 36001 | 2N3858-60 | SILICON TRANSISTORS | General Electric Solid State |
| 36002 | 2N3858-60 | SILICON TRANSISTORS | General Electric Solid State |
| 36003 | 2N3858A | SILICON TRANSISTORS | General Electric Solid State |
| 36004 | 2N3858A | SILICON TRANSISTORS | General Electric Solid State |
| 36005 | 2N3859A | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 36006 | 2N3859A | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 36007 | 2N3859A_D75Z | NPN General Purpose Amplifier | Fairchild Semiconductor |
| 36008 | 2N3860 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 36009 | 2N3866 | Silicon planar epitaxial overlay transistors | Philips |
| 36010 | 2N3866 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 36011 | 2N3866 | NPN SILICON HIGH FREQUENCY TRANSISTOR | Advanced Semiconductor |
| 36012 | 2N3866 | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
| 36013 | 2N3866 | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
| 36014 | 2N3866A | RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS | Microsemi |
| 36015 | 2N3866A | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
| 36016 | 2N3866AUB | Chip Type 2C3866A Geometry 1007 Polarity NPN | Semicoa Semiconductor |
| 36017 | 2N3867 | PNP Transistor | Microsemi |
| 36018 | 2N3867 | PNP Transistor | Microsemi |
| 36019 | 2N3867 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 36020 | 2N3867S | PNP Transistor | Microsemi |
| 36021 | 2N3868 | PNP Transistor | Microsemi |
| 36022 | 2N3868 | PNP Transistor | Microsemi |
| 36023 | 2N3868 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 36024 | 2N3868S | PNP Transistor | Microsemi |
| 36025 | 2N3870 | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | Motorola |
| 36026 | 2N3871 | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | Motorola |
| 36027 | 2N3872 | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | Motorola |
| 36028 | 2N3873 | Silicon Controlled Rectifiers(Reverse Blocking Triode Thyristors) | Motorola |
| 36029 | 2N3878 | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS | General Electric Solid State |
| 36030 | 2N3878 | HIGH SPEED EPITAXIAL COLLECTOR SILICON NPN PLANAR TRANSISTORS | General Electric Solid State |
| 36031 | 2N3879 | NPN Transistor | Microsemi |
| 36032 | 2N3884 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
| 36033 | 2N3884-2N3895 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
| 36034 | 2N3885 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
| 36035 | 2N3886 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
| 36036 | 2N3887 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
| 36037 | 2N3888 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
| 36038 | 2N3889 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
| 36039 | 2N3890 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
| 36040 | 2N3891 | Phase Control SCR 175 Amoeres Average 1200 Volts | Powerex Power Semiconductors |
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