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Datasheets found :: 1567829
Page: << | 8754 | 8755 | 8756 | 8757 | 8758 | 8759 | 8760 | 8761 | 8762 | 8763 | 8764 | >>
No.Part NameDescriptionManufacturer
350321CM1506HIGH CURRENT SILICON BRIDGE RECTIFIERSTRSYS
350322CM1506WHIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)Panjit International Inc
350323CM1508HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)Panjit International Inc
350324CM1508HIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 800 Volts CURRENT - 10 to 35 Amperes)Panjit International Inc
350325CM1508800 V, 15 A, high current silicon bridge rectifierTRANSYS Electronics Limited
350326CM1508HIGH CURRENT SILICON BRIDGE RECTIFIERSTRSYS
350327CM1508WHIGH CURRENT SILICON BRIDGE RECTIFIERS(VOLTAGE - 50 to 1000 Volts CURRENT - 15 Amperes)Panjit International Inc
350328CM150DU-12FIGBT Modules: 600VMitsubishi Electric Corporation
350329CM150DU-12FTrench Gate Design Dual IGBTMOD¢â 150 Amperes/600 VoltsPowerex Power Semiconductors
350330CM150DU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
350331CM150DU-12HIGBT Modules: 600VMitsubishi Electric Corporation
350332CM150DU-12HDual IGBTMOD 150 Amperes/600 VoltsPowerex Power Semiconductors
350333CM150DU-24FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USEMitsubishi Electric Corporation
350334CM150DU-24FIGBT Modules:1200VMitsubishi Electric Corporation
350335CM150DU-24FTrench Gate Design Dual IGBTMOD¢â 150 Amperes/1200 VoltsPowerex Power Semiconductors
350336CM150DU-24HIGBT Modules:1200VMitsubishi Electric Corporation
350337CM150DU-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
350338CM150DU-24HDual IGBTMOD 150 Amperes/1200 VoltsPowerex Power Semiconductors
350339CM150DU-34KAIGBT Modules:1700VMitsubishi Electric Corporation


350340CM150DU-34KADual IGBTMOD 150 Amperes/1700 VoltsPowerex Power Semiconductors
350341CM150DY-12HIGBT Modules: 600VMitsubishi Electric Corporation
350342CM150DY-12HHIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULESMitsubishi Electric Corporation
350343CM150DY-12HDual IGBTMOD 150 Amperes/600 VoltsPowerex Power Semiconductors
350344CM150DY-12NFHIGH POWER SWITCHING USEMitsubishi Electric Corporation
350345CM150DY-24HIGBT Modules:1200VMitsubishi Electric Corporation
350346CM150DY-24HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
350347CM150DY-24HDual IGBTMOD 150 Amperes/1200 VoltsPowerex Power Semiconductors
350348CM150DY-28HDual IGBTMOD 150 Amperes/1400 VoltsPowerex Power Semiconductors
350349CM150E3U-12FIGBT Modules: 600VMitsubishi Electric Corporation
350350CM150E3U-12HIGBT Modules: 600VMitsubishi Electric Corporation
350351CM150E3U-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
350352CM150E3U-12HChopper IGBTMOD 150 Amperes/600 VoltsPowerex Power Semiconductors
350353CM150E3U-24FIGBT Modules:1200VMitsubishi Electric Corporation
350354CM150E3U-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
350355CM150E3U-24HIGBT Modules:1200VMitsubishi Electric Corporation
350356CM150E3U-24HChopper IGBTMOD 150 Amperes/1200 VoltsPowerex Power Semiconductors
350357CM150TF-12HIGBT Modules: 600VMitsubishi Electric Corporation
350358CM150TF-12HMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
350359CM150TF-12HSix-IGBT IGBTMOD 150 Amperes/600 VoltsPowerex Power Semiconductors
350360CM150TJ-12FTrench Gate Design Six IGBTMOD¢â 150 Amperes/600 VoltsPowerex Power Semiconductors


Datasheets found :: 1567829
Page: << | 8754 | 8755 | 8756 | 8757 | 8758 | 8759 | 8760 | 8761 | 8762 | 8763 | 8764 | >>

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