| 330881 | BSV65 | NPN Transistor | Siemens |
| 330882 | BSV65 | NPN transistor for switching applications, marking FA or FB | Siemens |
| 330883 | BSV65 | NPN Transistor industrial type | Siemens |
| 330884 | BSV65 | NPN TRANSISTOR FOR SWITCHING APPLICATIONS | Siemens |
| 330885 | BSV65A | NPN TRANSISTOR FOR SWITCHING APPLICATIONS | Siemens |
| 330886 | BSV65B | NPN TRANSISTOR FOR SWITCHING APPLICATIONS | Siemens |
| 330887 | BSV65R | NPN TRANSISTOR FOR SWITCHING APPLICATIONS | Siemens |
| 330888 | BSV65RA | NPN TRANSISTOR FOR SWITCHING APPLICATIONS | Siemens |
| 330889 | BSV65RB | NPN TRANSISTOR FOR SWITCHING APPLICATIONS | Siemens |
| 330890 | BSV68 | Leaded Small Signal Transistor General Purpose | Central Semiconductor |
| 330891 | BSV68 | Switching transistor | mble |
| 330892 | BSV68 | Switching transistor | mble |
| 330893 | BSV68 | Silicon p-n-p low power transistor | Mullard |
| 330894 | BSV69 | Silicon NPN epitaxial planar transistor for switching applications in core drivers | AEG-TELEFUNKEN |
| 330895 | BSV77 | Fast and ultra fast switches transistor | SGS-ATES |
| 330896 | BSV78 | Field effect transistor | mble |
| 330897 | BSV78 | Silicon n channel field effect transistor, Junction FET | Mullard |
| 330898 | BSV79 | Field effect transistor | mble |
| 330899 | BSV79 | Silicon n channel field effect transistor, Junction FET | Mullard |
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| 330900 | BSV80 | Field effect transistor | mble |
| 330901 | BSV80 | Silicon n channel field effect transistor, Junction FET | Mullard |
| 330902 | BSV81 | Low-Power N-Channel Field-Effect MOS Transistor | CCSIT-CE |
| 330903 | BSV81 | Silicon n channel field effect transistor, insulated GATE FET (MOST) | Mullard |
| 330904 | BSV89 | Silicon NPN Epitaxial Planar Switching Transistor | IPRS Baneasa |
| 330905 | BSV89 | Fast and ultra fast switches transistor | SGS-ATES |
| 330906 | BSV90 | Silicon NPN Epitaxial Planar Switching Transistor | IPRS Baneasa |
| 330907 | BSV90 | Fast and ultra fast switches transistor | SGS-ATES |
| 330908 | BSV91 | Silicon NPN Epitaxial Planar Switching Transistor | IPRS Baneasa |
| 330909 | BSV91 | Fast and ultra fast switches transistor | SGS-ATES |
| 330910 | BSV92 | Fast and ultra fast switches transistor | SGS-ATES |
| 330911 | BSV95 | Fast and ultra fast switches transistor | SGS-ATES |
| 330912 | BSW11 | Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits | AEG-TELEFUNKEN |
| 330913 | BSW12 | Silicon NPN epitaxial planar transistor designed for use as high speed switch, in hybrid circuits. Electrically the BSW12 resembles 2N708 | AEG-TELEFUNKEN |
| 330914 | BSW13 | NPN Transistor industrial type | Siemens |
| 330915 | BSW17 | Silicon transistor arrays | SGS-ATES |
| 330916 | BSW19 | Silicon PNP epitaxial planar transistor for high speed switching applications | AEG-TELEFUNKEN |
| 330917 | BSW19 | Silicon transistor for switching applications PNP | IPRS Baneasa |
| 330918 | BSW19 | Silicon PNP Epitaxial Planar Transistor | IPRS Baneasa |
| 330919 | BSW19A | Silicon PNP Epitaxial Planar Transistor | IPRS Baneasa |
| 330920 | BSW19VI | Silicon PNP Epitaxial Planar Transistor | IPRS Baneasa |
