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Datasheets found :: 1351361Page: << | 7903 | 7904 | 7905 | 7906 | 7907 | 7908 | 7909 | 7910 | 7911 | 7912 | 7913 | >>
Nr.Part NameDescriptionManufacturer by
316281CM3718GIS1.5A LOW NOISE PWM STEP DOWN REGULATORChampion Microelectronic Corporation
316282CM3P-230LGastube arrester, 230VSEMITEC
316283CM3P-250LGastube arrester, 250VSEMITEC
316284CM3P-350LGastube arrester, 350VSEMITEC
316285CM3P-400LGastube arrester, 400VSEMITEC
316286CM400DU-12FIGBT Modules: 600VMitsubishi Electric Corporation
316287CM400DU-12FMITSUBISHI IGBT MODULES HIGH POWER SWITCHING USEMitsubishi Electric Corporation
316288CM400DU-12FTrench Gate Design Dual IGBTMOD¢â 400 Amperes/600 VoltsPowerex Power Semiconductors
316289CM400DU-12HIGBT Modules: 600VMitsubishi Electric Corporation
316290CM400DU-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316291CM400DU-12HDual IGBTMOD 400 Amperes/600 VoltsPowerex Power Semiconductors
316292CM400DU-12NFHHigh Frequency Dual IGBTMOD¢â 400 Amperes/600 VoltsPowerex Power Semiconductors
316293CM400DU-24FIGBT Modules:1200VMitsubishi Electric Corporation
316294CM400DU-24FDual IGBTMOD 400 Amperes/1200 VoltsPowerex Power Semiconductors
316295CM400DU-34KAIGBT Modules:1700VMitsubishi Electric Corporation
316296CM400DU-34KADual IGBTMOD 400 Amperes/1700 VoltsPowerex Power Semiconductors
316297CM400DU-5FIntegrated Gate Bipolar Transistor (IGBT) Modules: 250VMitsubishi Electric Corporation
316298CM400DU-5FTrench Gate Design Dual IGBTMOD¢â 400 Amperes/250 VoltsPowerex Power Semiconductors
316299CM400DY-12HIGBT Modules: 600VMitsubishi Electric Corporation



316300CM400DY-12HHIGH POWER SWITCHING USE INSULATED TYPE IGBT MODULESMitsubishi Electric Corporation
316301CM400DY-12HDual IGBTMOD 400 Amperes/600 VoltsPowerex Power Semiconductors
316302CM400DY-24AHIGH POWER SWITCHING USEMitsubishi Electric Corporation
316303CM400DY-50HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316304CM400DY-50HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
316305CM400DY-66HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316306CM400DY-66HHIGH POWER SWITCHING USE INSULATED TYPEPowerex Power Semiconductors
316307CM400HA-12HIGBT Modules: 600VMitsubishi Electric Corporation
316308CM400HA-12HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316309CM400HA-12HSingle IGBTMOD 400 Amperes/600 VoltsPowerex Power Semiconductors
316310CM400HA-24HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316311CM400HA-24Single IGBTMOD 400 Amperes/1200 VoltsPowerex Power Semiconductors
316312CM400HA-24HIGBT Modules:1200VMitsubishi Electric Corporation
316313CM400HA-24HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316314CM400HA-24HSingle IGBTMOD 400 Amperes/1200 VoltsPowerex Power Semiconductors
316315CM400HA-28HHigh Voltage Insulated Gate Bipolar Transistor (HVIGBT) ModulesMitsubishi Electric Corporation
316316CM400HA-28HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316317CM400HA-28HSingle IGBTMOD 400 Amperes/1400 VoltsPowerex Power Semiconductors
316318CM400HA-34HIGBT Modules:1700VMitsubishi Electric Corporation
316319CM400HA-34HIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPEMitsubishi Electric Corporation
316320CM400HA-34HSingle IGBTMOD 400 Amperes/1700 VoltsPowerex Power Semiconductors



Datasheets found :: 1351361Page: << | 7903 | 7904 | 7905 | 7906 | 7907 | 7908 | 7909 | 7910 | 7911 | 7912 | 7913 | >>
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