315041 | BF199 | NPN silicon transistor, RF amplification | SESCOSEM |
315042 | BF199 | Transistor NPN | Siemens |
315043 | BF199 | NPN Silicon RF Transistor | Siemens |
315044 | BF200 | 0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 15 - 40 hFE. | Continental Device India Limited |
315045 | BF200 | Silicon high frequency, low power NPN transistor | IPRS Baneasa |
315046 | BF200 | Si-PLANAR-npn | IPRS Baneasa |
315047 | BF200 | Silicon NPN Epitaxial Planar HF Transistor | IPRS Baneasa |
315048 | BF200 | Si-PLANAR-npn RF low power TRANSISTOR | IPRS Baneasa |
315049 | BF200 | High frequency transistor | mble |
315050 | BF200 | High frequency transistor | mble |
315051 | BF200 | Silicon N-P-N low power transistor | Mullard |
315052 | BF200 | V.H.F. Silicon Planar N-P-N Transistor | Mullard |
315053 | BF200 | NPN silicon transistor, RF amplification | SESCOSEM |
315054 | BF200 | Tranzystor wielkiej częstotliwości | Ultra CEMI |
315055 | BF200 | Tranzystor krzemowy małej mocy, wielkiej częstotliwości | Ultra CEMI |
315056 | BF2000 | Silicon N Channel MOSFET Tetrode | Siemens |
315057 | BF2000W | Silicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz) | Siemens |
315058 | BF2030 | RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB | Infineon |
315059 | BF2030 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) | Siemens |
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315060 | BF2030R | RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB | Infineon |
315061 | BF2030W | RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dB | Infineon |
315062 | BF2030W | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) | Siemens |
315063 | BF2040 | RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB | Infineon |
315064 | BF2040 | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) | Siemens |
315065 | BF2040R | RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB | Infineon |
315066 | BF2040W | RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dB | Infineon |
315067 | BF2040W | Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V) | Siemens |
315068 | BF214 | Silicon high frequency, low power NPN transistor | IPRS Baneasa |
315069 | BF214 | Si-PLANAR-npn | IPRS Baneasa |
315070 | BF214 | Silicon NPN Epitaxial Planar HF Transistor | IPRS Baneasa |
315071 | BF214 | Si-PLANAR-npn RF low power TRANSISTOR | IPRS Baneasa |
315072 | BF214 | Tranzystor krzemowy małej mocy, wielkiej częstotliwości | Ultra CEMI |
315073 | BF214 | Tranzystor wielkiej częstotliwości | Ultra CEMI |
315074 | BF215 | Silicon high frequency, low power NPN transistor | IPRS Baneasa |
315075 | BF215 | TRANSISTOR Si-PLANAR-npn | IPRS Baneasa |
315076 | BF215 | Silicon NPN Epitaxial Planar HF Transistor | IPRS Baneasa |
315077 | BF215 | Si-PLANAR-npn RF low power TRANSISTOR | IPRS Baneasa |
315078 | BF215 | Tranzystor wielkiej częstotliwości | Ultra CEMI |
315079 | BF215 | Tranzystor krzemowy małej mocy, wielkiej częstotliwości | Ultra CEMI |
315080 | BF222 | Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGC | SGS-ATES |