|   Home   |   All manufacturers   |   By Category   |  
FR DE ES IT PT RU

   
Quick jump to:  1N  2N  2SA  2SC  74  AD  BA  BC  BD  BF  BU  CXA  HCF  IRF  KA  KIA  LA  LM  MC  NE  ST  STK  TDA  TL  UA
LM317 LM339 MAX232 NE555 LM324 7805 2N3055 LM358 2N2222 74LS138 TDA7294 TL431 IRF540 1N4148 G45A


Datasheets found :: 1726161
Page: << | 7872 | 7873 | 7874 | 7875 | 7876 | 7877 | 7878 | 7879 | 7880 | 7881 | 7882 | >>
No.Part NameDescriptionManufacturer
315041BF199NPN silicon transistor, RF amplificationSESCOSEM
315042BF199Transistor NPNSiemens
315043BF199NPN Silicon RF TransistorSiemens
315044BF200 0.150W General Purpose NPN Metal Can Transistor. 20V Vceo, 0.020A Ic, 15 - 40 hFE.Continental Device India Limited
315045BF200Silicon high frequency, low power NPN transistorIPRS Baneasa
315046BF200Si-PLANAR-npnIPRS Baneasa
315047BF200Silicon NPN Epitaxial Planar HF TransistorIPRS Baneasa
315048BF200Si-PLANAR-npn RF low power TRANSISTORIPRS Baneasa
315049BF200High frequency transistormble
315050BF200High frequency transistormble
315051BF200Silicon N-P-N low power transistorMullard
315052BF200V.H.F. Silicon Planar N-P-N TransistorMullard
315053BF200NPN silicon transistor, RF amplificationSESCOSEM
315054BF200Tranzystor wielkiej częstotliwościUltra CEMI
315055BF200Tranzystor krzemowy małej mocy, wielkiej częstotliwościUltra CEMI
315056BF2000Silicon N Channel MOSFET TetrodeSiemens
315057BF2000WSilicon N Channel MOSFET Tetrode (Short-channel transistor with high S/C quality factor For low-noise, gain-controlled input stages up to 1 GHz)Siemens
315058BF2030RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dBInfineon
315059BF2030Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)Siemens


315060BF2030RRF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dBInfineon
315061BF2030WRF-MOSFET - integrated semi biasing network, VDS=5V, gfs=31mS, Gp=23dB, F=1.5dBInfineon
315062BF2030WSilicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)Siemens
315063BF2040RF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dBInfineon
315064BF2040Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)Siemens
315065BF2040RRF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dBInfineon
315066BF2040WRF-MOSFET - integrated semi biasing network, VDS=5V, gfs=41mS, Gp=23dB, F=1.5dBInfineon
315067BF2040WSilicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 5V)Siemens
315068BF214Silicon high frequency, low power NPN transistorIPRS Baneasa
315069BF214Si-PLANAR-npnIPRS Baneasa
315070BF214Silicon NPN Epitaxial Planar HF TransistorIPRS Baneasa
315071BF214Si-PLANAR-npn RF low power TRANSISTORIPRS Baneasa
315072BF214Tranzystor krzemowy małej mocy, wielkiej częstotliwościUltra CEMI
315073BF214Tranzystor wielkiej częstotliwościUltra CEMI
315074BF215Silicon high frequency, low power NPN transistorIPRS Baneasa
315075BF215TRANSISTOR Si-PLANAR-npnIPRS Baneasa
315076BF215Silicon NPN Epitaxial Planar HF TransistorIPRS Baneasa
315077BF215Si-PLANAR-npn RF low power TRANSISTORIPRS Baneasa
315078BF215Tranzystor wielkiej częstotliwościUltra CEMI
315079BF215Tranzystor krzemowy małej mocy, wielkiej częstotliwościUltra CEMI
315080BF222Epitaxial planar NPN transistor, designed for tuners of FM receivers, and features low noise, high gain and excelent forward AGCSGS-ATES


Datasheets found :: 1726161
Page: << | 7872 | 7873 | 7874 | 7875 | 7876 | 7877 | 7878 | 7879 | 7880 | 7881 | 7882 | >>


© 2024    www.datasheetcatalog.com