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Datasheets found :: 1726161
Page: << | 7690 | 7691 | 7692 | 7693 | 7694 | 7695 | 7696 | 7697 | 7698 | 7699 | 7700 | >>
No.Part NameDescriptionManufacturer
307761BD243BCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
307762BD243BCOMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
307763BD243BNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65WUSHA India LTD
307764BD243B-DComplementary Silicon Plastic Power TransistorsON Semiconductor
307765BD243BTUNPN Epitaxial Silicon TransistorFairchild Semiconductor
307766BD243CCOMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSBoca Semiconductor Corporation
307767BD243C 65.000W Medium Power NPN Plastic Leaded Transistor. 100V Vceo, 6.000A Ic, 15 hFE.Continental Device India Limited
307768BD243CNPN Epitaxial Silicon TransistorFairchild Semiconductor
307769BD243CPNP power transistorFERRANTI
307770BD243CEpitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W.General Electric Solid State
307771BD243CPOWER TRANSISTORS(6A,65W)MOSPEC Semiconductor
307772BD243CComplementary Silicon Plastic Power TransistorsMotorola
307773BD243CPower 6A 100V NPNON Semiconductor
307774BD243CNPN SILICON POWER TRANSISTORSPower Innovations
307775BD243CSilicon NPN Power Transistors TO-220C packageSavantic
307776BD243CCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
307777BD243CCOMPLEMENTARY SILICON POWER TRANSISTORSSGS Thomson Microelectronics
307778BD243CCOMPLEMENTARY SILICON POWER TRANSISTORSST Microelectronics
307779BD243CNPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65WUSHA India LTD


307780BD243TUNPN Epitaxial Silicon TransistorFairchild Semiconductor
307781BD244COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSBoca Semiconductor Corporation
307782BD244 65.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 6.000A Ic, 30 hFE.Continental Device India Limited
307783BD244PNP Epitaxial Silicon TransistorFairchild Semiconductor
307784BD244Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W.General Electric Solid State
307785BD244POWER TRANSISTORS(6A,65W)MOSPEC Semiconductor
307786BD244PNP SILICON POWER TRANSISTORSPower Innovations
307787BD244Silicon PNP Power Transistors TO-220C packageSavantic
307788BD24455 V, PNP silicon power transistorTRANSYS Electronics Limited
307789BD244PNP SILICON POWER TRANSISTORSTRSYS
307790BD244ACOMPLEMENTARY SILICON PLASTIC POWER TRANSISTORSBoca Semiconductor Corporation
307791BD244A 65.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 6.000A Ic, 30 hFE.Continental Device India Limited
307792BD244APNP Epitaxial Silicon TransistorFairchild Semiconductor
307793BD244AEpitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W.General Electric Solid State
307794BD244APOWER TRANSISTORS(6A,65W)MOSPEC Semiconductor
307795BD244APNP SILICON POWER TRANSISTORSPower Innovations
307796BD244ASilicon PNP Power Transistors TO-220C packageSavantic
307797BD244A70 V, PNP silicon power transistorTRANSYS Electronics Limited
307798BD244APNP SILICON POWER TRANSISTORSTRSYS
307799BD244APNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W.USHA India LTD
307800BD244ATUPNP Epitaxial Silicon TransistorFairchild Semiconductor


Datasheets found :: 1726161
Page: << | 7690 | 7691 | 7692 | 7693 | 7694 | 7695 | 7696 | 7697 | 7698 | 7699 | 7700 | >>


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